GaN HEMT radio frequency device with air bridge field plate structure, and preparation method thereof

Abstract

The invention relates to a GaN HEMT radio frequency device with an air bridge field plate structure, and a preparation method thereof. The GaN HEMT radio frequency device comprises a buffer layer, a channel layer, an AlN insertion layer and a barrier layer which are sequentially stacked on a substrate; a source electrode and a drain electrode are located on the barrier layer; a GaN cap layer is located between the source electrode and the drain electrode, and a grid electrode is located on the cap layer; a passivation layer continuously crosses and covers between the source electrode and the grid electrode, the grid electrode and between the grid electrode and the drain electrode; one end of an air bridge field plate structure with a symmetrical step-shaped cross section extends along the surface of the source electrode and stretches across the source electrode and the grid electrode, the grid electrode and the grid electrode and the drain electrode, and the other end of the air bridge field plate structure is positioned between the grid electrode and the drain electrode; and an air area exists between the passivation layer and the symmetrical stepped air bridge field plate structure. The design of inserting an AlN thin layer between the heterojunctions is combined with the symmetrical step-shaped air bridge field plate structure, so that the radio frequency performance and the high-temperature stability of the device are obviously improved, and in addition, the preparation method is simple, the process reliability is high, and the industrial application prospect is good.

Description

technical field [0001] The invention relates to the field of radio frequency devices, in particular to a GaN HEMT radio frequency device with an air bridge field plate structure and a preparation method thereof. Background technique [0002] In recent years, GaN-based HEMT devices have attracted much attention in the field of power electronics due to their excellent performance, especially excellent DC breakdown voltage and AC frequency performance. Therefore, research on methods to improve the radio frequency characteristics of GaN devices has become a major issue in this field. hotspot. The introduction of methods and structures such as graded channels and doping has promoted the improvement of the overall performance of HEMT devices and laid the foundation for the current wider application requirements. However, in the prior art, the contradiction between high frequency and other performance parameters of the device is still prominent, and the reliability and stability u...

AI Technical Summary

Problems solved by technology

However, in the prior art, the contradiction between high frequency and other performance parameters of the device is still prominent, and the reliability and stability under high temperature are also insufficient. Therefore, how to better solve the above problems and further improve the comprehensive RF performance of the device is the current sea focus of attention inside and outside

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