Image sensor device and manufacturing method thereof

An image sensor and device technology, applied in the direction of electric solid devices, semiconductor devices, electrical components, etc., can solve the problems of capillary force influence and aggravation

Pending Publication Date: 2021-06-22
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, photoresist masks with high aspect ratios are more susceptible to capillary forces
These effects are exacerbated as the aspect ratio of the mask is increased and / or the pitch is reduced

Method used

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  • Image sensor device and manufacturing method thereof
  • Image sensor device and manufacturing method thereof
  • Image sensor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0097] Example 1. A method for fabricating an image sensor device comprising: forming a first photoresist layer on a front side of a device substrate, wherein the first photoresist layer has spaced apart a first trench; performing a first implantation process using the first photoresist layer as a mask to form a first isolation region in the device substrate; forming on the front side of the device substrate a second photoresist layer, wherein the second photoresist layer has second grooves spaced apart from each other; performing a second implant using the second photoresist layer as a mask process to form a second isolation region in the device substrate and intersecting the first isolation region; and form a third photoresist layer on the front side of the device substrate, wherein the The third photoresist layer has third grooves spaced apart from each other; using the third photoresist layer as a mask to perform a third implantation process in the device substrate and wit...

example 2

[0098] Example 2. The method of example 1, wherein the second grooves of the second photoresist layer have a first pitch and the third grooves of the third photoresist layer have a a second pitch that is the same as the first pitch.

example 3

[0099] Example 3. The method of example 2, wherein the first pitch is greater than 1 micron.

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Abstract

The invention relates to an image sensor device and a manufacturing method thereof. The method includes forming a first photoresist layer on a front side of a device substrate and having first trenches spaced apart from each other. A first implantation process is performed using the first photoresist layer as a mask to form first isolation regions in the device substrate. A second photoresist layer is formed on the front side and has second trenches. A second implantation process is performed using the second photoresist layer as a mask to form second isolation regions in the device substrate and crossing over the first isolation regions. A third photoresist layer is formed on the front side and has third trenches spaced apart from each other. A third implantation process is performed using the third photoresist layer as a mask to form third isolation regions in the device substrate and crossing over the first isolation regions but spaced apart from the second isolation regions.

Description

technical field [0001] The present disclosure relates to image sensor devices and methods of manufacturing the same. Background technique [0002] Image sensor devices are widely used in various imaging applications and products, for example, digital still camera or mobile phone camera applications. These devices utilize arrays of sensor elements (pixels) in a substrate. A pixel may be a photodiode, or other photosensitive element adapted to absorb light projected towards the substrate and convert the sensed light into an electrical signal. In order to obtain higher resolution, it is advantageous to increase the number of pixels in an image sensor device. [0003] The ever-shrinking geometries pose challenges to the fabrication of image sensor devices. For example, a fabrication process may require a high aspect ratio photoresist mask to produce micron or sub-micron sized pixels. However, photoresist masks with high aspect ratios are more susceptible to capillary forces....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14689H01L27/1463H01L27/1464H01L27/14643H01L27/14634G03F7/094H01L27/14609H01L27/14685H01L27/14687
Inventor 邱威超张浚威郭景森许峰嘉
Owner TAIWAN SEMICON MFG CO LTD
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