Metal oxide semiconductor (MOS) device flicker noise model and extraction method
A MOS device, flicker noise technology, applied in the direction of instruments, special data processing applications, electrical digital data processing, etc., can solve the disadvantages of designers, the difficulty of precise control of small-sized MOS devices, and the difficulty of accurately characterizing the flicker noise of small-sized MOS devices characteristics and other issues to achieve the effect of improving fitting accuracy and accurate actual noise characteristics
Pending Publication Date: 2021-07-09
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, as the length and width of MOS devices decrease at the same time, it becomes more and more difficult to precisely control small-sized MOS devices in the process. The device width is related, so the traditional model will be difficult to accurately characterize the flicker noise characteristics of small-sized MOS devices, which is unfavorable for designers
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0030] In order to make the purpose, advantages and features of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in very simplified form and not drawn to scale, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In addition, the structures shown in the drawings are often a part of the actual structures. In particular, each drawing needs to display different emphases, and sometimes uses different scales. It should also be understood that, unless otherwise specified or pointed out, the terms “first”, “second”, “third” and other descriptions in the specification are only used to distinguish each component, element, step, etc. in the specification, rather than It is used to express the logical relationship or sequence relationship between various comp...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides an MOS device flicker noise model and an extraction method, and the extraction method comprises the steps: designing MOS device structures of different sizes, and dividing all MOS devices into a first MOS device and a second MOS device according to the size of each MOS device; measuring flicker noise data of the MOS devices with different sizes; establishing a basic flicker noise model; performing curve fitting on the flicker noise characteristics of the first MOS device; establishing a flicker noise model in which a correction function related to the device width is introduced; performing curve fitting on the flicker noise characteristics of the second MOS device; and verifying the flicker noise model of the second MOS device. According to the method, on the basis of an original noise model, the correction function related to the length and the width of the MOS device is introduced, so that the fitting precision of the flicker noise model of the small-size MOS device is improved, and the actual noise characteristics of devices with different sizes can be represented more accurately.
Description
technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a MOS device flicker noise model and an extraction method. Background technique [0002] With the continuous advancement of semiconductor manufacturing process technology, the size of MOS devices has become smaller and smaller, and the challenges to process control and model accuracy have also increased. In advanced integrated circuits, the noise characteristics of MOS devices, especially the flicker noise and its modeling, have received more and more attention. At present, the simulation of MOS flicker noise adopts the traditional standardized model, and its correction to the length of the MOS device is a constant, which is applicable when the width of the MOS device is large. However, as the length and width of MOS devices decrease at the same time, it becomes more and more difficult to precisely control small-sized MOS devices in the process. The device width is ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): G06F30/398
CPCG06F30/398
Inventor 周艳商干兵
Owner SHANGHAI HUALI MICROELECTRONICS CORP