Unlock instant, AI-driven research and patent intelligence for your innovation.

Tray for chemical vapor deposition device and chemical vapor deposition device

A technology of chemical vapor deposition and trays, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of inconsistency of luminous wavelength and influence on the uniformity of the substrate to be processed, and achieve small temperature difference and increase consistent effect

Pending Publication Date: 2021-07-16
ADVANCED MICRO FAB EQUIP INC CHINA +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the heat energy provided by the heating wire is conducted to the substrate to be processed through the base, the temperature of the contact area between the substrate to be processed and the side wall will be significantly higher than the temperature of the non-contact area, resulting in the emission wavelength of each area of ​​the substrate to be processed Inconsistent, affecting the uniformity of the substrate to be processed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tray for chemical vapor deposition device and chemical vapor deposition device
  • Tray for chemical vapor deposition device and chemical vapor deposition device
  • Tray for chemical vapor deposition device and chemical vapor deposition device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] As described in the background technology, the epitaxial layer grown on the edge of the substrate to be processed by the existing chemical vapor deposition device has poor consistency. In order to solve the above technical problems, the technical solution of the present invention provides a tray and A chemical vapor deposition device, wherein the tray device includes: a tray, which can rotate along its central axis, and is provided with a plurality of substrate slots, the substrate slots are used to accommodate the substrate to be processed, each of the substrate slots It includes a distal section away from the central axis, a proximal section close to the central axis, and a first compensation section between the distal section and the proximal section, the proximal section of the substrate groove has a groove center, the distance from the first compensation section to the center of the groove is the first distance, the distance from the proximal section to the center o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
depthaaaaaaaaaa
Login to View More

Abstract

The invention relates to a tray for a chemical vapor deposition device and the chemical vapor deposition device. The tray for the chemical vapor deposition device comprises a tray, wherein the tray can rotate along the central axis of the tray and is provided with a plurality of substrate grooves, the substrate grooves are used for accommodating substrates to be processed, each substrate groove comprises a telecentric section far away from the central axis, a proximal section close to the central axis and a first compensation section located between the telecentric section and the proximal section, each substrate groove is provided with a groove center, the distance from the first compensation section to the groove center is a first distance, the distance from the proximal section to the groove center is a second distance, and the first distance is greater than the second distance. The chemical vapor deposition device is beneficial to improving the consistency of growing an epitaxial layer on the edge of a wafer.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a tray for a chemical vapor deposition device and the chemical vapor deposition device. Background technique [0002] A semiconductor light emitting diode (Light Emitting Diode, LED) is a semiconductor diode that can convert electrical energy into light energy. Light-emitting diodes have the advantages of high efficiency, energy saving, and environmental protection. They are widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power LEDs to realize semiconductor solid-state lighting has become a new generation of light sources that have entered thousands of households and led human lighting. history of revolution. [0003] Usually, the substrate to be processed is placed on the tray in the reaction chamber of the Metal Organic Chemical Vapor Deposition (MOCVD) device, and the heat energy provided by the heating wire in the M...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/458C23C16/46C23C16/455
CPCC23C16/4581C23C16/46C23C16/45565
Inventor 姜勇汪国元
Owner ADVANCED MICRO FAB EQUIP INC CHINA