Throughput improvement with interval conditioning purging
An adjustable and gas-scavenging technology, applied in coatings, gaseous chemical plating, discharge tubes, etc., can solve problems such as the limitation of the total number of wafers and the batch size
Pending Publication Date: 2021-07-23
LAM RES CORP
View PDF7 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
In some cases, due to the accumulation of defects on the various internal components of the reaction chamber and / or upstream equipment components, it is necessary to stop the process and shut down the chamber for cleaning, so the reaction chamber is closed between chamber cleaning operations. The total number of wafers that can be processed (sometimes called the batch size) may be limited
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0052] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the presented embodiments. Embodiments disclosed herein may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail to avoid unnecessarily obscuring the disclosed embodiments. Additionally, while the disclosed embodiments will be described in conjunction with specific embodiments, it should be understood that the specific embodiments are not intended to limit the disclosed embodiments.
[0053] In this application, the terms "wafer" and "substrate" are used interchangeably. Wafers or substrates used in the semiconductor device industry typically have a diameter of 200 mm, or 300 mm, or 450 mm. Unless otherwise stated, processing details (e.g., flow rates, power levels, etc.) described herein are with respect to processing 300 mm diameter substrates, or with respect ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| particle diameter | aaaaa | aaaaa |
| particle diameter | aaaaa | aaaaa |
| particle diameter | aaaaa | aaaaa |
Login to View More
Abstract
Processing methods and apparatus for increasing a reaction chamber batch size. Such a method of processing deposition substrates (e.g., wafers), involves the steps of conducting a deposition on a first portion of a batch of deposition wafers in a reaction chamber, conducting an interval conditioning reaction chamber purge to remove defects generated by the wafer processing from the reaction chamber; and following the interval conditioning mid-batch reaction chamber purge, conducting the deposition on another portion of the batch of wafers in the reaction chamber. The interval conditioning reaction chamber purge is conducted prior to exceeding a baseline for acceptable defect (e.g., particle) generation in the chamber and is performed while no wafers are positioned in the reaction chamber.
Description
[0001] incorporated by reference [0002] The PCT application form is filed as part of this application at the same time as this specification. Each application from which this application claims the benefit or priority, as identified in the concurrently filed PCT application form, is hereby incorporated by reference in its entirety for all purposes. Background technique [0003] Semiconductor processing typically takes place in dedicated processing facilities, where effective throughput often needs to be optimized. Such equipment may include reaction chambers that house various hardware (eg, substrate supports, showerheads, etc.) used to process batches of wafers during semiconductor processing. In some cases, due to the accumulation of defects on the various internal components of the reaction chamber and / or upstream equipment components, it is necessary to stop the process and shut down the chamber for cleaning, so the reaction chamber is closed between chamber cleaning op...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/455C23C16/505H01J37/32
CPCC23C16/505H01J37/32853H01J37/32862H01J37/32834H01J37/3299H01J37/32935H01J37/32779C23C16/4408C23C16/4405C23C16/45565C23C16/45536C23C16/45544C23C16/45557H01J37/32174H01J37/32449H01J2237/3321
Inventor 陈俊豪杰里米·大卫·菲尔兹弗兰克·洛伦·帕斯夸里
Owner LAM RES CORP