Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and apparatus for treating semiconductor substrate

A substrate and gas technology, applied in the surface treatment to transport hydrogen halide, repair the high aspect ratio structure on the semiconductor substrate or avoid its friction, a method of equipment field, can solve the problem of unavailability

Pending Publication Date: 2021-07-23
LAM RES CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, some aspect ratios cannot take advantage of boiling IPA drying without pattern collapse

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for treating semiconductor substrate
  • Method and apparatus for treating semiconductor substrate
  • Method and apparatus for treating semiconductor substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0140] The repair process disclosed in WO2019 / 083735 was performed on a substrate with nanopillars (corresponding to cylinders with a diameter of 30 nm, a pitch of 90 nm, and a height of 600 nm). It was found that the treatment of the present invention was able to repair 90% of the collapsed structures resulting in a percent collapse of less than 10%.

[0141] The features disclosed in the foregoing description, or in the following claims, or in the drawings, in particular form, or directed to the features for performing the stated functions, or for the methods or processes for obtaining the disclosed results, where appropriate They can be used separately or in any combination to realize various forms of the present invention.

[0142] While the invention has been described above with reference to exemplary embodiments thereof, many equivalent modifications and changes will be apparent to those skilled in the art. Accordingly, the above-described exemplary embodiments of the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to gas delivery systems and methods suitable for repairing or preventing stiction of high aspect ratio structures on semiconductor substrates. The gas delivery systems and methods deliver a mixture of a hydrogen halide, vapourised solvent and carrier gas to a substrate through a heated supply line (201), to avoid formation of droplets during transit of the gas mixture. The gas mixture supply line is preferably held within a conduit (202) which includes a purge gas supply line (204), which allows any hydrogen halide leaking through the gas mixture supply line (201) to be carried away by a flow of purge gas within the conduit. In such embodiments, the purge gas is also preferably heated, and used as a means of heating the dispensing outlet of the gas mixture supply line.

Description

technical field [0001] The present invention relates to substrate processing methods, in particular methods of repairing or avoiding rubbing of high aspect ratio structures on semiconductor substrates. The invention also relates to methods and devices for carrying out such methods, in particular for the delivery of hydrogen halides in surface treatment. Background technique [0002] Substrate processing systems may be used to deposit films on substrates (eg, semiconductor wafers) or to etch, clean, and / or otherwise treat surfaces of substrates. In some processes, the substrate may be subjected to wet processing. During these processes, the substrate is held on a spin chuck. As the spin chuck rotates, fluid nozzles may be used to dispense fluids, such as liquids or gases, and / or may apply heat to process the substrate. [0003] Certain substrates contain high aspect ratio (HAR) structures, such as nanopillars, trenches, or vias. The HAR structure has a structure whose wid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/02H01L21/311B81C1/00H01L21/67
CPCH01L21/02049H01L21/02057H01L21/67017H01L21/67028H01L21/67051
Inventor 丹尼尔·布赖恩卡尔-海因茨·霍恩沃特伯恩哈德·洛伊德尔赫尔穆特·洛伊阿努尔夫·卡斯特纳迈克尔·克莱姆托马斯·科米特
Owner LAM RES CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com