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Substrate cleaning solution, method for manufacturing cleaned substrate by utilizing the same, and method for manufacturing device

A technology for cleaning liquids and substrates, applied in the preparation of detergent mixture compositions, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve problems such as insufficient removal, particle residue, and insufficient particle removal, and achieve elimination Effect of process control and detachment prevention

Active Publication Date: 2021-08-06
MERCK PATENT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Including problems such as: Insufficient removal of particles; Uneven film formation with particles remaining; Formed film not peeled off from substrate; Formed film not sufficiently removed to become waste; Complications in synthesis if attempting to use fluorine-containing materials, etc. ; no part of the film that initiates debonding of the formed film; by completely dissolving the film, retained particles detach and reattach to the substrate; process control required to keep organic solvents in the film

Method used

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  • Substrate cleaning solution, method for manufacturing cleaned substrate by utilizing the same, and method for manufacturing device
  • Substrate cleaning solution, method for manufacturing cleaned substrate by utilizing the same, and method for manufacturing device
  • Substrate cleaning solution, method for manufacturing cleaned substrate by utilizing the same, and method for manufacturing device

Examples

Experimental program
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Effect test

preparation example Construction

[0141] Preparation of patterned substrates

[0142] The KrF resist composition (AZ DX-6270P, Merck Performance Materials Co., Ltd., hereinafter referred to as MPM) was dropped onto an 8-inch Si substrate, and the substrate was spin-coated at a speed of 1500 rpm. The substrate was soft baked at 120°C for 90 seconds. Use KrF stepper (FPA-3000 EX5, Canon), at 20mJ / cm 2 For exposure, perform PEB (post-exposure bake) at 130° C. for 90 seconds, and develop with a developer (AZ MIF-300, manufactured by MPM). A resist pattern having a pitch of 360 nm and a line pitch of 1:1 was thus obtained. Using the resist pattern as an etching mask, the substrate was etched with a dry etching device (NE-5000N, ULVAC). Then, the substrate was cleaned with a stripper (AZ 400T, MPM Corporation) to strip the resist pattern and resist residue. This resulted in a patterned substrate with a pattern with a pitch of 360 nm, a duty ratio of 1:1 and a line height of 150 nm.

[0143] Preparation of B...

preparation example 1

[0157] Phenolic resin (Mw about 300) was used as (A) insoluble or poorly soluble solute, and 2,2-bis(4-hydroxyphenyl)propane was used as (B) soluble solute.

[0158] 2,2-bis(4-hydroxyphenyl)propane was weighed so that it might be 5 mass % with respect to a phenol resin (Mw about 300). A total of 5 g of these materials was added to 95 g of IPA ((C) solvent). This was stirred with a stirrer for 1 hour to obtain a liquid having a solid content concentration of 5% by mass.

[0159] The liquid was filtered through Optimizer UPE (Japan Entegris Co., Ltd., UPE, pore size 10 nm). Cleaning liquid 1 is thus obtained. It is listed in Table 1.

[0160] In Table 1 below, the numbers in parentheses in column (B) indicate the concentration (% by mass) of (B) soluble solutes compared to (A) insoluble or poorly soluble solutes.

[0161] Table 1

[0162]

[0163]

[0164] In the above table, they are abbreviated as follows.

[0165] Phenolic resin (Mw about 300) A1,

[0166] Phenol...

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Abstract

The issue of the invention is to obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. The present invention relates to a substrate cleaning solution comprising an insoluble or hardly soluble solute (A), a soluble solute (B), and a solvent (C).

Description

technical field [0001] The invention relates to a substrate cleaning solution for cleaning a substrate and a substrate cleaning method using the substrate cleaning solution. Background technique [0002] Generally, in a substrate manufacturing process, foreign matter may be generated due to, for example, a photolithography process. Accordingly, the manufacturing process of the substrate may include a cleaning process to remove particles from the substrate. In the cleaning step, there are a method of physically removing particles by supplying a cleaning solution such as deionized water (DIW) to the substrate, a method of chemically removing particles with a chemical solution, and the like. However, as the patterns become finer and more complex, the patterns are more susceptible to physical or chemical damage. [0003] In addition, as a substrate cleaning step, there is a method of forming a film on a substrate to remove particles. [0004] Patent Document 1 studies a compo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D161/00H01L21/02
CPCC09D161/00H01L21/02057C08L33/02C09D7/40C09D5/14C11D7/5004C11D11/0047H01L21/02052H01L21/461
Inventor 绢田贵史长原达郎堀场优子
Owner MERCK PATENT GMBH