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Pure field effect transistor low-power-consumption over-temperature protection circuit

An over-temperature protection circuit and field effect tube technology, which is applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problem of occupied area, and achieve the effect of avoiding triode, reducing quiescent current, and avoiding starting circuit

Pending Publication Date: 2021-08-20
HANGZHOU DIANZI UNIV FUYANG ELECTRONIC INFORMATION RES INST CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] 3. A low-power temperature protection circuit using a negative temperature coefficient current source. The circuit does not use bipolar transistors, and uses the current characteristics of field effect transistors to temperature to cooperate with resistance to realize over-temperature protection. It does not use triodes and does not need to start In addition, the circuit uses a field effect transistor working in the sub-threshold region to achieve the requirement of low power consumption, but the disadvantage is that a large resistor is still used, which occupies a certain area

Method used

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  • Pure field effect transistor low-power-consumption over-temperature protection circuit
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  • Pure field effect transistor low-power-consumption over-temperature protection circuit

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Embodiment Construction

[0073] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0074] see figure 1 , is shown as a structural block diagram of a pure FET low-power over-temperature protection circuit according to an embodiment of the present invention, including a bias circuit 10, a temperature-voltage conversion circuit 20, a selection circuit 50, a comparator 30 and a digital output circuit 40, wherein , the output of the bias circuit 10 is connected to the input of the temperature-voltage conversion circuit 20, the output...

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Abstract

The invention discloses a pure field effect transistor low-power-consumption over-temperature protection circuit which comprises a biasing circuit, a temperature and voltage conversion circuit, a selection circuit, a comparator and a digital output circuit. The output of the biasing circuit is connected with the input of the temperature and voltage conversion circuit. The output of the temperature and voltage conversion circuit is connected with the input of the selection circuit and the input of the comparator. The output of the comparator is connected with the input of the selection circuit. The output of the selection circuit is connected with the input of the comparator. Low power consumption of 340nA quiescent current is achieved, hysteresis comparison of temperature is achieved, use of triodes is avoided, use of resistors is avoided, and use of a starting circuit is avoided.

Description

technical field [0001] The invention belongs to the technical field of temperature protection circuits, and in particular relates to a pure field effect tube low-power over-temperature protection circuit. Background technique [0002] The current analog integrated circuit manufacturing industry has been extremely developed, and the area is getting smaller and smaller. The resulting heat dissipation problem has gradually become an urgent development direction in chip design. Until this problem is perfectly solved, the thermal protection circuit seems to be a palliative solution. When the temperature is greater than the cut-off temperature T stop , the over-temperature protection circuit stops the chip from working to prevent the chip from being burned out; after the chip stops working, the temperature drops, and when the temperature is lower than the restart temperature T rst , the over-temperature protection circuit will make the chip work again (T stop >T rst ), and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/567
CPCG05F1/567
Inventor 宫庭威程知群乐超
Owner HANGZHOU DIANZI UNIV FUYANG ELECTRONIC INFORMATION RES INST CO LTD
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