Low dropout regulator with embedded reference

A low-dropout linear, voltage-stabilizer technology, applied in instruments, regulating electrical variables, control/regulating systems, etc., can solve the problems of many transistors and large quiescent current, and achieve small temperature coefficient, low quiescent current, and low power consumption. Effect

Inactive Publication Date: 2018-05-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of circuit structure consists of an operational amplifier and a voltage reference source VREF to form a feedback loop. It uses many transistors and has a large quiescent current. It is not suitable for occasions that require a small quiescent current, such as wristbands and mobile phones.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low dropout regulator with embedded reference
  • Low dropout regulator with embedded reference
  • Low dropout regulator with embedded reference

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0020] The present invention uses first NPN transistor Q1, second NPN transistor Q2, fourth NPN transistor Q4 and first resistor R1, second resistor R2, third resistor R3, The fourth resistor R4 constitutes the working principle of the bandgap reference, and at the same time constructs the error amplification channel, so that the low dropout linear regulator LDO provided by the present invention can realize the power conversion function with low temperature coefficient and maintain a low static current and a simpler circuit structure. Simultaneously using the first NPN transistor Q1 and the second NPN transistor Q2 as the reference voltage generation avoids the use of an error amplifier, simplifies the circuit, and reduces power consumption of the circuit at the same time.

[0021] Such as figure 2 Shown is a circuit diagram of a low-dropo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A low dropout regulator with embedded reference belongs to the technical field of analogue integrated circuits. Base-emitting electrode voltage of an NPN transistor works as negative temperature coefficient voltage and resistance voltage works as positive temperature coefficient voltage; temperature compensation is achieved via a band-gap reference method; a band-gap reference is formed by an NPNtransistor and resistors in a feedback loop of a low dropout regulator; an error amplification channel is established, so a low-temperature coefficient power supply conversion function can be realizedfor the low dropout regulator. The low dropout regulator has functions of a reference voltage source, and can be integrated to a chip for internal power supply; low static currents can be maintained;compared with the low dropout regulators in the prior art, power supply conversion can be realized with few transistors; and low power consumption is required.

Description

technical field [0001] The invention belongs to the technical field of analog integrated circuits, and in particular relates to a low-dropout linear regulator with an embedded reference. Background technique [0002] Low dropout regulator (Low Dropout Regulator, LDO), as the main component of modern power management chip, is usually composed of functional modules such as MOS adjustment tube working in the saturation region, reference voltage source, error amplifier and various protection circuits. It is characterized by small area, easy integration, low noise and low quiescent current. The main technical indicators of low dropout linear regulator LDO include: temperature coefficient, power supply rejection ratio (Power Supply Rejection, PSR), load transient response and load regulation rate, etc. [0003] The low dropout linear regulator LDO is very suitable for the internal power supply of the chip. In this case, the output of the general low dropout linear regulator LDO d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
CPCG05F1/56
Inventor 甄少伟王佳佳曾莉尧曹厚华母国才丁柏浪
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap