Gate voltage modulation dynamic source region socket tunneling field effect transistor and preparation method thereof

Abstract

The invention provides a gate voltage modulation dynamic source region socket tunneling field effect transistor which is simple in structure, reasonable in design, high in on-state current level and capable of inhibiting generation of bipolar current. The field effect transistor comprises a source region, a body region and a drain region which are sequentially arranged in the transverse direction, wherein a source region socket region is formed in an interface region, close to the source region, in the body region; body region oxide layers are arranged on the upper and lower surfaces of the body region respectively, and main gate polycrystalline silicon electrodes are arranged on the upper and lower surfaces of the body region oxide layers respectively and serve as gate connection gate voltage VGS; the upper and lower surfaces of the source region and the source region socket region are respectively provided with a source region dielectric layer, and the upper and lower surfaces of the source region dielectric layer are respectively provided with a metal gate electrode corresponding to the source region socket region; the metal gate electrode is connected with a gate voltage VGS; drain region oxide layers are respectively arranged on the upper and lower surfaces of the drain region; metal electrodes are arranged on the side faces of the source region and the drain region respectively, serve as a source electrode and a drain electrode and are correspondingly connected with source electrode voltage VS and drain electrode voltage VDS.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gate voltage modulation dynamic source region pocket tunneling field effect transistor and a preparation method thereof. Background technique [0002] Tunneling Field Effect Transistor TFET was proposed by H.Kisaki et al. in 1973, and was first applied to CMOS development by P.F.Wang et al. in 2004. In theory, TFET can achieve a sub-threshold swing lower than 60mV / dec, and has the advantages of small off-state current, low static power consumption, and good frequency characteristics. However, the biggest challenge to the applicability of the tunneling field effect transistor is its on-state current (I ON ) 2 to 3 orders of magnitude smaller than MOSFET. [0003] The tunneling field effect transistors in the prior art include the following three types. [0004] The first is a tunneling field effect transistor (All-silicon TFET) using a silicon homojunction. Since the ...

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Problems solved by technology

However, both carbon nanotube-based and graphene-based face difficulties in actual fabrication

[0007] Generally speaking, due to the large carrier tunneling quality and forbidden band width of silicon-based TFET, according to the band tunneling probability T WKB It can be seen from the principle that the tunneling probability of TFET devices under the same structure is small, so the on-state current is relatively small, which limits the application of tunneling field effect transistors; and when the TFET device is in the reverse working state, due to the symmetrical structure of the device itself, The "drain-channel" junction will also form a tunnel, which will generate a reverse tunneling current, which is called a bipolar current, which makes the advantage of a small sub-threshold swing weakened by process factors, resulting in a structural performance that cannot meet the requirements.

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