Semiconductor device structure and manufacturing method thereof

Abstract

Provided are a semiconductor device structure and a manufacturing method thereof. The semiconductor device structure includes a first insulating layer formed over a conductive feature and a capacitor structure embedded within the first insulating layer. The semiconductor device also includes a bonding pad formed on the first insulating layer and corresponding to the capacitor structure. The bonding pad has an upper surface and a multi-step edge to form at least three corners. In addition, the semiconductor device structure includes a second insulating layer compliantly covering at least three corners formed by the upper surface of the bonding pad and the multi-step edge.

Description

technical field [0001] Embodiments of the present disclosure relate to a semiconductor technology, and in particular to a semiconductor device structure and a manufacturing method thereof. Background technique [0002] As electronic technology advances, electronic devices become more complex and involve an increasing number of integrated circuits to achieve the required versatility. Accordingly, the manufacture of such electronic devices involves an increasing number of manipulation steps, and a variety of different types of materials, to produce semiconductor devices for use in the electronic devices. [0003] Semiconductor devices may include active and / or passive devices, such as transistors and capacitors. These devices are initially isolated from each other, but are subsequently interconnected together. Typical interconnection structures include horizontal interconnections, such as metal lines (wires), and vertical interconnections, such as vias and contacts. A bondi...

AI Technical Summary

Problems solved by technology

As more components with different materials are involved and the complexity of manufacturing operations increases, more challenges arise in modifying the structure of semiconductor devices and improving manufacturing operations

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