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Hall effect sensor devices and methods of forming hall effect sensor devices

A Hall effect sensor technology, applied in the field of Hall effect sensor devices, can solve the problems of increased depletion width, resistance mismatch, and different depletion width

Pending Publication Date: 2021-09-14
GLOBALFOUNDRIES SINGAPORE PTE LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, these depletion widths may increase when higher external voltages are applied to the terminal
In addition, the variation of the depletion width of different p-n junctions may be different
As a result, there may be a resistance mismatch between different regions of the Hall plate

Method used

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  • Hall effect sensor devices and methods of forming hall effect sensor devices
  • Hall effect sensor devices and methods of forming hall effect sensor devices
  • Hall effect sensor devices and methods of forming hall effect sensor devices

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Embodiment Construction

[0015] Embodiments generally relate to semiconductor devices. More specifically, some embodiments relate to sensor devices including Hall Effect sensor devices. The sensor arrangement can be used to sense magnetic fields and can be used in various industries such as but not limited to the automotive industry for position measurement.

[0016] Aspects of the invention and some of its features, advantages and details are explained more fully below with reference to non-limiting examples shown in the accompanying drawings. Wherein, descriptions of well-known materials, fabrication tools, processing techniques, etc. are omitted so as not to unnecessarily obscure the present invention in detail. It should be understood, however, that the detailed description and specific examples, while indicating various aspects of the invention, are given by way of illustration only and not limitation. Various alternatives, modifications, additions and / or arrangements within the spirit and / or s...

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PUM

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Abstract

The invention relates to Hall effect sensor devices and methods of forming Hall effect sensor devices. A Hall effect sensor device may be provided, including one or more sensor structures. Each sensor structure may include: a base layer having a first conductivity type; a Hall plate region having a second conductivity type opposite from the first conductivity type arranged above the base layer; a first isolating region arranged around and adjoining the Hall plate region, and contacting the base layer; a plurality of second isolating regions arranged within the Hall plate region; and a plurality of terminal regions arranged within the Hall plate region. The first and second isolating regions may include electrically insulating material, and each neighboring pair of terminal regions may be electrically isolated from each other by one of the second isolating regions.

Description

technical field [0001] The present disclosure relates generally to Hall effect sensor devices and methods of forming the same. Background technique [0002] Hall effect sensor devices capable of determining the strength of a magnetic field are used in a variety of applications, such as automotive applications. A Hall effect sensor device typically includes a Hall plate composed of a conductive material and terminals connected to the Hall plate. An external voltage can be applied across the terminals to cause current to flow through the Hall plate. In the case that there is a magnetic field perpendicular to the plane of the Hall plate, the charge carriers in the current will be affected by the Lorentz force. This may generate a Hall voltage in the Hall plate. By determining the magnitude of the Hall voltage, the strength of the magnetic field can be determined. [0003] Hall effect sensor devices may be implemented as semiconductor devices whose Hall plates and terminatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/06H01L43/14H10N52/00H10N52/01H10N52/80
CPCH10N52/101H10N52/01G01R33/077G01R33/0094H10B61/00H10N59/00G01R33/07G01R33/0052H10N52/80
Inventor 孙永顺卓荣发郑萍
Owner GLOBALFOUNDRIES SINGAPORE PTE LTD