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Optical detector

An optical detection and detector technology, applied in the field of detectors, can solve problems such as loss of incident light

Pending Publication Date: 2021-09-14
TRINAMIX GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the IR spectral range includes wavelengths from 760nm to 1000μm, a large part of the incident light can be lost in the measurement application

Method used

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  • Optical detector
  • Optical detector
  • Optical detector

Examples

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Embodiment Construction

[0211] figure 1 An exemplary embodiment of an optical detector 110 according to the present invention is shown in a highly schematic manner. Herein, the detector 110 is adapted for optical detection, in particular, for detecting at least one wavelength within at least a sub-region of the spectral range, wherein the desired sub-region of the spectral range may preferably be selected from the infrared (IR) spectral range, ie, Spectral range from 760nm to 1000µm.

[0212] In particular, the detector may be designed to sense at least one optically imaginable property of at least one object 112 . In particular, the optically conceivable properties determinable by detector 110 may be selected from at least one of optical properties and / or geometric properties of object 112 . For example, the optical properties may preferably be selected from the transmittance, absorption, emission, and / or reflectivity of the object 112 , while the geometric properties may specifically refer to th...

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PUM

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Abstract

The invention relates to a detector (110) for optical detection comprising a circuit carrier (130) designed to carry at least one layer, wherein the circuit carrier (130) is or comprises a printed circuit board (132); at least one absorptive layer (138), the absorptive layer (138) being placed on a partition of the circuit carrier (130), wherein the absorptive layer (138) is designed to at least partially absorb the incident light beam (120), wherein the absorptive layer (138) incorporates infrared absorbing pigments (144); a substrate layer (114), the substrate layer (114) being directly or indirectly adjacent to the absorptive layer (138), wherein the substrate layer (114) is at least partially transparent with respect to the incident light beam (120); at least one sensor area (122), each of the sensor areas (122) being placed on the substrate layer (114), wherein each of the sensor areas (122) is designed to generate at least one sensor signal in a manner dependent on an illumination of the sensor area (122) by the incident light beam; and an evaluation device (150) designed to generate at least one item of information by evaluating the at least one sensor signal. The detector (110) constitutes a detector for detecting optical radiation, especially within the infrared spectral range, specifically with regard to sensing at least one of transmissivity, absorption, emission and reflectivity, being capable of avoiding or diminishing a cross detection between sensor areas (122), specifically between adjacent sensor areas (122), thus, avoiding or diminishing a deterioration of a measurement based on the at least one sensor signal.

Description

technical field [0001] The present invention relates to a detector for the optical detection of radiation, in particular in the infrared spectral range, in particular with respect to at least one optically imaginable property of a sensing object. More particularly, the detector may be used to determine the transmittance, absorption, emission, reflectance and / or position of at least one object. Further, the present invention relates to a method for manufacturing an optical detector and various uses of the optical detector. Such devices, methods and uses can be used, for example, in various fields of sensing and security technology. However, further applications are possible. Background technique [0002] An optical detector (IR detector) designed for sensing in particular in the infrared spectral range especially comprises a thin sensor layer, preferably with a lead sulfide (PbS) or lead selenide (PbSe) photoconductor, which is arranged on the substrate layer. In this con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/28G01J5/08G01J5/20H01L31/02H01L27/146H01L31/0232G01J1/02G01J5/04G01J5/02G01J5/06H01L31/09H01L27/144H01L31/032H01L31/0216
CPCG01J5/0853G01J5/20G01J5/28H01L31/0216H01L31/0324H01L31/095H01L27/1443G01J5/06G01J5/022G01J5/045G01J1/0214G01J1/0209H01L31/02325H01L31/02966H01L31/0304H01L31/03046H01L31/09H01L31/18
Inventor S·瓦鲁施A·克莱恩S·穆勒W·赫尔梅斯R·森德
Owner TRINAMIX GMBH