Storage unit threshold voltage reading method and device, electronic equipment and storage medium

Abstract

The invention discloses a storage unit threshold voltage reading method and device, electronic equipment and a storage medium, and the method comprises the following steps: programming a whole chip, and writing checkerboard data; adjusting the internal reference voltage of the chip, and recording the number of the storage units with data change information in the adjustment process of the internal reference voltage of the chip and the addresses of the corresponding storage units; drawing a threshold voltage distribution diagram according to the numerical value of the reference voltage and the number of the storage units with the data change information under the corresponding reference voltage. According to the storage unit threshold voltage reading method provided by the embodiment of the invention, the distribution condition of the threshold voltage in the storage unit in the chip can be intuitively and accurately reflected, and the data retention capability of the chip can be visually represented.

Description

Technical field [0001] The present application relates to the field of chip technology, and in particular, there is a memory cell threshold voltage reading method, apparatus, electronic device, and storage medium. Background technique [0002] With the development of the NOR Flash process, the physical dimensions of memory cells are getting smaller, and the storage unit data hold capacity is increasing, and the reliability test of NOR FLASH data hold capability has become more important. The industry usually uses a storage unit threshold to evaluate the storage unit data hold capability with a variation of the high temperature baking time. NOR FLASH Data Holding Capacity Test is a very important test item for Flash reliability assessment. [0003] In the prior art, generally use the ATE test machine to perform the chip's threshold voltage reading. The reading process is: full-film programming full "0" data; from low to high change chip internal READ reference voltage, read data "...

AI Technical Summary

Problems solved by technology

This reading method has the following disadvantages: at the same time, it can only read the retention capacity of one type of data in the stored data, and can only reflect the change of the total amount of this type of data with the voltage parameter READ reference voltage, and cannot intuitively reflect the local reference voltage range. Number of storage units

[0004] For the above problems, there is no effective technical solution

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