Test sample preparation method and test sample
A technology for testing samples and samples, which is applied to the preparation method of test samples and the field of test samples, can solve the problems that the quality of TEM samples cannot meet the needs of testing and affect the testing results, so as to reduce the manual correction process, save manpower, and reduce judgment. and the effect of the steps to correct the adjustment
Active Publication Date: 2022-07-29
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
However, in related technologies, due to the lack of sample preparation equipment or sample preparation methods, the quality of the prepared TEM samples cannot meet the requirements of detection, which affects the detection results
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[0060] The technical solutions of the present disclosure will be further elaborated below with reference to the accompanying drawings and specific embodiments of the description.
[0061] In the embodiments of the present disclosure, the terms "first", "second", etc. are used to distinguish similar objects, and are not used to describe a specific order or sequence.
[0062] In embodiments of the present disclosure, the term "layer" refers to a portion of a material that includes a region having a thickness. A layer may extend over the entirety of the underlying or overlying structure, or may have an extent that is less than the extent of the underlying or overlying structure. Furthermore, a layer may be a region of a homogeneous or heterogeneous continuous structure having a thickness less than the thickness of the continuous structure. For example, the layer may be located between the top and bottom surfaces of the continuous structure, or the layer may be between any horizo...
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The embodiment of the present disclosure discloses a preparation method of a test sample and a test sample. The method includes: providing a structure to be processed; wherein, the structure to be processed includes a first surface and a second surface arranged oppositely, and the target structure is located inside the structure to be processed; along a first direction perpendicular to the first surface, determine the size of the target structure. The nth offset between the centerline and the centerline of the structure to be processed; wherein, n is a natural number; when the nth offset does not meet the first preset condition, the structure to be processed is obtained from the first surface or the second surface Perform the nth first type thinning, and after the nth first type thinning, determine the (n+1)th offset between the centerline of the target structure and the centerline of the structure to be processed; when the offset When the amount satisfies the first preset condition, the first thickness of the structure to be processed along the first direction is determined; when the first thickness is less than or equal to the first preset thickness, it is determined to form a test sample including the target structure.
Description
technical field [0001] Embodiments of the present disclosure relate to the field of semiconductor technology, and in particular, to a method for preparing a test sample and a test sample. Background technique [0002] Process adjustments are often involved in the development and production of semiconductor devices. Before adjusting the process, it is usually necessary to study the growth conditions, microstructure and bonding force of each film layer to help R&D and production personnel find design defects, abnormal changes in process parameters or improper operation in production, etc. problems, and provide data reference and support for subsequent product design or production process adjustment. [0003] Focused ion beam (FIB) has become an important method for special sample preparation and fine structure processing due to its high sample preparation accuracy and high speed. Electron Microscope, TEM) samples. However, in the related art, due to insufficient sample prep...
Claims
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IPC IPC(8): G01N23/20008G01N23/04G01N1/28
CPCG01N23/20008G01N23/04G01N1/28
Inventor 李威王娅茹
Owner YANGTZE MEMORY TECH CO LTD