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On-chip detection method and system for triode parameters

An on-chip detection and triode technology, applied in the direction of bipolar transistor testing, measuring electricity, measuring devices, etc., can solve the problems of complex implementation scheme and high implementation cost, and achieve the effect of simple circuit implementation, low implementation cost and high precision

Active Publication Date: 2022-05-17
苏州瀚宸科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] This scheme can detect a higher-precision β value, but the overall implementation scheme is more complicated, and the implementation cost is high

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  • On-chip detection method and system for triode parameters
  • On-chip detection method and system for triode parameters
  • On-chip detection method and system for triode parameters

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Embodiment Construction

[0044] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0045] The invention provides an on-chip detection method and system for triode parameters, the detection accuracy of which is not affected by temperature and process, while obtaining relatively detailed β information, the circuit implementation is simple and the implementation cost is low.

[0046] The present invention will be further described in d...

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Abstract

The invention discloses an on-chip detection method and system of triode parameters. The on-chip detection method of the triode parameters comprises the following steps: Step S1: setting a bandgap current source I c1 The output of the bandgap output current I; step S2: set the transistor Q 1 The collector of the bandgap current source I is connected through the first resistor branch c1 The output terminal of the transistor Q 1 The base of the bandgap current source I through the second resistor branch c1 The output terminal of the transistor Q 1 The emitter is grounded; Step S3: Set the voltage detection device to detect the bandgap current source I c1 The output voltage of the output terminal produces the detection value of the amplification factor of the triode current. The invention can obtain relatively detailed current amplification factor information, and the circuit implementation is simple and the implementation cost is low.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to an on-chip detection method and system for triode parameters. Background technique [0002] The collector / base current magnification (β) is an important parameter of bipolar transistors. It represents the ratio of the current flowing through the collector and base of the transistor. This parameter will affect many performances of the circuit. Because β will have a large deviation in the semiconductor manufacturing process, and β will also vary with temperature, which makes the performance of the circuit also vary greatly with the process and temperature. If β can be detected, then the performance of the circuit can be optimized according to the β information by means of the circuit, which will make the overall circuit insensitive to changes in process and temperature, and improve the robustness of the circuit; in addition, according to the value of β as A method for ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2608G01R31/2621
Inventor 李小勇
Owner 苏州瀚宸科技有限公司