Multi-time programmable memory structure and manufacturing method thereof

Abstract

The invention provides a multi-time programmable memory structure and a manufacturing method thereof. The multi-time programmable memory structure comprises a substrate; a floating gate located on the substrate; a selection gate located on the substrate, and is located on one side of the floating gate; a gate dielectric layer located on the floating gate; an interlayer dielectric layer located on the substrate, the selection gate and the gate dielectric layer; a first type of conductive plugs located in the interlayer dielectric layer; a second type of conductive plugs located in the interlayer dielectric layer; and a first metal layer located on the interlayer dielectric layer. The first metal layer comprises first metal and second metal, and the first metal is connected with the gate dielectric layer through the first type of conductive plugs; the second metal is connected with the selection gate through a second type of conductive plug; and the radial size of the first type of conductive plugs is larger than that of the second type of conductive plugs. According to the multi-time programmable memory structure and the manufacturing method thereof provided by the invention, the performance of the device can be improved.

Description

technical field [0001] The invention relates to the field of memory, in particular to a multi-time programmable memory structure and a manufacturing method thereof. Background technique [0002] Multi-Time Programmable Memory (MTP) devices have the advantages that data can be stored, read, and erased multiple times, and the stored data will not disappear after power off. Therefore, it has become a memory device widely used in personal computers and electronic equipment. [0003] Multiple times programmable (Multi-Time Program Memory, MTP) memory, compared with single-time programmable memory (One time Program Memory, OTP), has the ability to store, read, and erase data multiple times action, and the stored data will not disappear after power failure, has gradually become a memory device widely used in personal computers, electronic equipment, mobile storage and other fields. However, the size of the multiple programmable memory structure formed by the traditional method is...

AI Technical Summary

Problems solved by technology

However, the size of the multi-time programmable memory structure formed by the traditional method is large, and the performance is not ideal yet.

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