A non-volatile
semiconductor memory device comprise a
memory cell array having a plurality of
memory cell units each having a plurality of electrically-programmable
memory cell connected in series, a plurality of word lines each connected to each of control gates of said plurality of memory cells, said plurality of word lines including a selected word line connected to a control gate of selected one of said memory cells for
programming, and a plurality of unselected word lines different from said selected word line, a
bit line connected to one end of said memory
cell unit, and a source line connected to another end of the memory
cell unit, wherein, when data is programmed into the selected memory cells, a first potential is supplied to said selected word line, and a first unselected word line adjacent, toward a source line side, to said selected word line is set to floating state, and thereafter, a second potential which is higher than said first potential is supplied to said selected word line.