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Image sensor device

An image sensor and substrate technology, applied in the field of image sensors, can solve problems such as sensitivity reduction and crosstalk

Pending Publication Date: 2021-10-12
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, incident light may be reflected by the metal wire layer and may be absorbed by the interlayer insulating film, resulting in reduced sensitivity
In addition, reflected light may be absorbed into adjacent (or neighboring) pixels, causing crosstalk to occur

Method used

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Embodiment Construction

[0020] Various implementations and examples of image sensor devices are provided that solve one or more problems due to limitations and disadvantages of the related art. Various implementations of the disclosed technology relate to an image sensor device capable of reducing or blocking pad area noise and parasitic capacitance and solving the above-mentioned problems of the related art.

[0021] Reference will now be made in detail to embodiments of the disclosed technology, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0022] The advantages and features of the disclosed technology and methods of achieving the advantages and features of the disclosed technology will be clearly understood from the embodiments described below in conjunction with the accompanying drawings. However, the disclosed technology is not limited to the following embod...

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Abstract

An image sensor device is disclosed, which blocks noise of a pad area. The image sensor device includes a substrate, a pad, and an impurity area. The substrate includes a first surface and a second surface, and includes first conductive impurities. The pad is disposed at the first surface of the substrate. The impurity area is formed in the substrate to overlap with the pad in a first direction, the impurity area being includes second conductive impurities different from the first conductive impurities.

Description

technical field [0001] The present invention relates generally to image sensor technology, and more particularly, to a technique for blocking noise or minimizing parasitic capacitance of a pad region of an image sensor. Background technique [0002] Image sensors convert optical images into electrical signals. Recently, due to an increase in research and development in the computer industry and the communication industry, in various applications and fields such as digital cameras, video cameras, personal communication systems (PCS), game machines, surveillance cameras, medical micro cameras, etc., the demand for high-quality, Demand for high-performance image sensors is increasing rapidly. [0003] In particular, MOS image sensors can be driven more easily and can be implemented using more scanning schemes. The MOS image sensor may include: one or more photoelectric conversion elements configured to sense the magnitude of incident light; and multiple metal wire layers conf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L23/488
CPCH01L27/14643H01L27/1464H01L23/488H01L27/14603H01L27/14632H01L27/14636H01L21/76898H01L23/481H01L27/1463H01L27/14612H04N25/709
Inventor 李承龙
Owner SK HYNIX INC
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