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Method and device for monitoring connection of semiconductor of power module

A technology of power modules and semiconductors, which is applied in the direction of electrical connection testing, measuring electricity, power supply testing, etc., and can solve problems such as the inability to measure the aging state of a single semiconductor, and serious faults in power modules.

Pending Publication Date: 2021-10-19
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, it may not be possible to measure the aging state of individual semiconductors due to shielding from the electrical connections of the paralleled semiconductors
A detected increase in on-state voltage does not convey information about semiconductor aging, so the entire power module must be considered at risk of catastrophic failure and should be replaced

Method used

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  • Method and device for monitoring connection of semiconductor of power module
  • Method and device for monitoring connection of semiconductor of power module
  • Method and device for monitoring connection of semiconductor of power module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0054] figure 1 An example of a power module is shown consisting of a plurality of semiconductors, the connection of which is monitored by means of the invention.

[0055] The power module PM includes a plurality of semiconductors S1 to SN connected in parallel. The equivalent resistance of the connection of semiconductors S1 to SN to the bus and the corresponding bus resistance are indicated in figure 1 middle.

[0056] The resistance RB1 represents the resistance of the bonding wire of the semiconductor S1, the resistance RB2 represents the resistance of the bonding wire of the semiconductor S2, and the resistance RBN represents the resistance of the bonding wire of the semiconductor SN.

[0057] The resistance Rbu1 represents the resistance of the bus line of the semiconductor S1, the resistance Rbu2 represents the resistance of the bus line of the semiconductor S2, and the resistance Rbun represents the resistance of the bus line of the semiconductor SN.

[0058] Semico...

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PUM

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Abstract

The invention: determines if the duration of the conducting state of the semiconductors in a first cycle of the pulse width modulation is upper than a predetermined duration, measures, during the conducting state of the semiconductors at a second cycle, the voltage provided to the load, sequentially disables the conduction of each semiconductor during a part of the duration of the conducting state of the semiconductors in a third cycle and measures the voltage provided to the load, determines the differences between the voltage measured during the second cycle and each voltage measured during the third cycle, orders the differences according to their value, checks if the determined order is identical to an order stored in a memory of the device and determines that one connection of one semiconductor is deteriorated if the order is changed.

Description

technical field [0001] The present invention generally relates to a method and a device for monitoring the connection of semiconductors of a power module. Background technique [0002] Power modules consist of multiple semiconductors connected in parallel in order to achieve higher power levels in power modules without fabricating large area semiconductors. Wire bonds are commonly used as an electrical interconnection technique for connecting semiconductors of power modules. Bond wires have been identified as the main cause of power module failure. As the bond wire ages due to thermomechanical fatigue, the bond wire delaminates, causing a redistribution of current in the power module. However, when the remaining bonding wire is forced to carry a load current, the temperature of the remaining bonding wire increases and increases its own degradation rate. Then, the last remaining bond wires on the set of parallel semiconductors may experience very high current densities, ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/40G01R31/70
CPCG01R31/40G01R31/70G01R31/31924
Inventor J·万楚克J·布兰德雷洛S·莫洛夫
Owner MITSUBISHI ELECTRIC CORP
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