Clamping structure, silicon wafer cutting device and silicon wafer cutting process

Abstract

The invention relates to a clamping structure, a silicon wafer cutting device and a silicon wafer cutting process. The silicon wafer cutting process comprises the steps that the contact position of a crystal bar and a cutting wire net is determined through visual inspection, and the coordinates of the position in the feeding direction are determined as visual inspection zero point coordinates; a cutter feeding position interval value in the feeding direction is determined according to the visual inspection zero point coordinates, and a first machining parameter is preset; and the crystal bar moves in the feeding direction until the instant position coordinates of the crystal bar fall into the cutter feeding position interval value, the silicon wafer cutting equipment is controlled to be in the state of operation according to the first machining parameter, and when the crystal bar makes contact with the cutting wire net, cutting is conducted according to the first machining parameter. According to the clamping structure, the silicon wafer cutting device and the silicon wafer cutting process, the cutter feeding TTV caused by the deviation between the cutting zero point determined by visual inspection and the actual cutting zero point is reduced.

Description

technical field [0001] The invention relates to the technical field of silicon wafer processing, in particular to a clamping structure, a silicon wafer cutting device and a cutting process thereof. Background technique [0002] With the development of the solar photovoltaic industry, the application of silicon wafers in semiconductor devices, solar cells and other fields is increasing. Then came the multi-wire cutting technology for silicon wafers, which is a cutting processing method that cuts the crystal rods in the semiconductor processing area into hundreds of silicon wafers at one time through the high-speed relative reciprocating motion between the crystal rods and the cutting wire network. . [0003] There is TTV abnormality in the process of multi-wire cutting of silicon wafers. TTV abnormality is the difference between the maximum thickness and the minimum thickness of the silicon wafer in the thickness measurement value obtained by multi-wire cutting of silicon wa...

AI Technical Summary

Problems solved by technology

[0005] Based on this, it is necessary to provide a clamping structure, a silicon wafer cutting device and its cutting process for the existing silicon wafer cutting process and device, which cannot improve the problem of entering the TTV.

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