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EUV radiation source and related methods

A radiation source and radiation conversion technology, which is applied in X-ray tubes, X-ray equipment, X-ray tubes with huge currents, etc., can solve the problems of poor conversion efficiency of LPP sources, etc.

Pending Publication Date: 2021-11-16
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

LPP sources are known to have poor conversion efficiencies

Method used

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  • EUV radiation source and related methods
  • EUV radiation source and related methods
  • EUV radiation source and related methods

Examples

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Embodiment Construction

[0059] figure 1 A lithographic system comprising a radiation source SO and a lithographic apparatus LA according to an embodiment of the invention is shown. The radiation source SO is configured to generate a beam B of extreme ultraviolet (EUV) radiation. The lithographic apparatus LA comprises an illumination system IL, a support structure MT configured to support a patterning device MA (eg a mask), a projection system PS and a substrate table WT configured to support a substrate W. The illumination system IL is configured to condition the radiation beam B before it is incident on the patterning device MA. The projection system is configured to project a beam of radiation B' (now patterned by mask MA) onto substrate W. The substrate W may include previously formed patterns. In this case, the lithographic apparatus aligns the patterned radiation beam B' with the pattern previously formed on the substrate W.

[0060] Radiation source SO (such as figure 1 Schematically depi...

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Abstract

An EUV radiation source of a laser-produced-plasma type comprises: a fuel emitter configured to produce fuel droplets; and a laser system configured to illuminate a fuel droplet with radiation for converting the fuel droplet into a plasma at a plasma formation region. The laser system comprises: a laser configured to produce radiation of a first wavelength; and a nonlinear medium configured to receive radiation of the first wavelength, produce radiation of a second wavelength using a nonlinear optical process at a radiation conversion region, and deliver radiation of the second wavelength to the plasma formation region, wherein the second wavelength is longer than the first wavelength.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to EP application 19151860.4 filed on January 15, 2019 and EP application 19164608.2 filed on March 22, 2019. Both applications are hereby incorporated by reference in their entirety. technical field [0003] The present invention relates to a source of extreme ultraviolet radiation of the laser-generated plasma type and related methods. A source of extreme ultraviolet radiation may form part of a lithographic system. Background technique [0004] A lithographic apparatus is a machine configured to apply a desired pattern to a substrate. A lithographic apparatus may be used, for example, in the manufacture of integrated circuits (ICs). For example, a lithographic apparatus may project a pattern at a patterning device (eg, a mask) onto a layer of radiation-sensitive material (resist) provided on a substrate. [0005] To project a pattern on a substrate, a lithographic apparatus may ...

Claims

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Application Information

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IPC IPC(8): G03F7/20H05G2/00
CPCH05G2/003H01S3/0092H01S3/1643G03F7/70033
Inventor W·乌巴克斯O·O·弗索拉托
Owner ASML NETHERLANDS BV