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A method for evaluating the state of health of power semiconductor devices based on the characteristic frequency of thermal impedance

A power semiconductor and characteristic frequency technology, which is applied in the field of health status evaluation of power semiconductor devices based on thermal impedance characteristic frequency, can solve problems such as complex applications, achieve accurate results, simple process, and improve reliability

Active Publication Date: 2022-07-15
SHANGHAI JIAOTONG UNIV
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Problems solved by technology

However, the existing methods for reflecting the health state are based on time-domain analysis. The application is relatively complex and requires solving a large number of parameters. Using frequency-domain analysis to evaluate the health state of semiconductor devices not only reduces the difficulty of parameter extraction, but also effectively reflects the health. state

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  • A method for evaluating the state of health of power semiconductor devices based on the characteristic frequency of thermal impedance
  • A method for evaluating the state of health of power semiconductor devices based on the characteristic frequency of thermal impedance
  • A method for evaluating the state of health of power semiconductor devices based on the characteristic frequency of thermal impedance

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Embodiment Construction

[0047] The present invention will be described in detail below with reference to specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that, for those skilled in the art, several changes and improvements can be made without departing from the inventive concept. These all belong to the protection scope of the present invention.

[0048] figure 1 This is a flowchart of a method for evaluating the state of health of a power semiconductor device based on a characteristic frequency of thermal impedance in an embodiment of the present invention.

[0049] refer to figure 1 As shown, the method for detecting the state of health of a power semiconductor device based on the characteristic frequency of thermal impedance in this embodiment includes the following steps:

[0050] S100, extracting the thermal impedance characteristic frequency of t...

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Abstract

The present invention provides a method for detecting the state of health of a power semiconductor device based on the characteristic frequency of thermal impedance, comprising: extracting the characteristic frequency of thermal impedance of the power semiconductor device and its heat sink; detecting the changes of the n characteristic frequencies of the thermal impedance; The change of the characteristic frequency of the thermal impedance is compared with the characteristic frequency of the thermal impedance in a healthy state to evaluate the healthy state of the power semiconductor device. In the present invention, the thermal impedance characteristic frequency of the power semiconductor device and its radiator is obtained by extracting the output heat flow of the power semiconductor device and the temperature curves of the junction, the shell and the radiator; health status at different locations. The present invention can detect the internal and external health states of the power semiconductor device in a high-efficiency, low-cost and non-invasive manner.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a method for evaluating the state of health of a power semiconductor device based on the characteristic frequency of thermal impedance. Background technique [0002] Power devices are one of the most vulnerable components in converters. Monitoring the state of power semiconductor devices to determine their health status can effectively improve the reliability of power electronic systems. In recent years, the frequency domain thermal impedance model is gradually attracting attention because it can accurately predict the temperature characteristics of power semiconductor devices in the whole frequency range compared with the traditional Foster and Cauer models. However, the existing methods for reflecting the health status are all based on time domain analysis, which is complex in application and requires a large number of parameters to be solved. Frequency domain analysi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26G06F30/398G06F119/02G06F119/04
CPCG01R31/2601G06F30/398G06F2119/02G06F2119/04G06F2119/08
Inventor 马柯钟权
Owner SHANGHAI JIAOTONG UNIV
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