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Evaluation method for health state of power semiconductor device based on thermal impedance characteristic frequencies

A power semiconductor and characteristic frequency technology, which is applied in the field of health status evaluation of power semiconductor devices based on thermal impedance characteristic frequency, can solve problems such as application complexity, achieve accurate results, improve reliability, and simplify the process

Active Publication Date: 2021-11-26
SHANGHAI JIAO TONG UNIV
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  • Application Information

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Problems solved by technology

However, the existing methods for reflecting the health state are based on time-domain analysis. The application is relatively complex and requires solving a large number of parameters. Using frequency-domain analysis to evaluate the health state of semiconductor devices not only reduces the difficulty of parameter extraction, but also effectively reflects the health. state

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  • Evaluation method for health state of power semiconductor device based on thermal impedance characteristic frequencies
  • Evaluation method for health state of power semiconductor device based on thermal impedance characteristic frequencies
  • Evaluation method for health state of power semiconductor device based on thermal impedance characteristic frequencies

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Embodiment Construction

[0047] The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several changes and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0048] figure 1 It is a flow chart of a method for evaluating the health state of a power semiconductor device based on thermal impedance characteristic frequency in an embodiment of the present invention.

[0049] refer to figure 1 As shown, the health status detection method of power semiconductor devices based on thermal impedance characteristic frequency in this embodiment includes the following steps:

[0050] S100, extracting the thermal impedance characteristic frequency of the power semiconduc...

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Abstract

The invention provides an evaluation method for the health state of a power semiconductor device based on thermal impedance characteristic frequencies. The method comprises the following steps: extracting the thermal impedance characteristic frequencies of the power semiconductor device and radiators thereof; detecting the change conditions of the n thermal impedance characteristic frequencies; and comparing the change conditions of the thermal impedance characteristic frequencies with a thermal impedance characteristic frequency in a healthy state, and evaluating the healthy state of the power semiconductor device. According to the method, output heat flow of the power semiconductor device and temperature curves of junctions, shells and radiators are extracted to obtain thermal impedance characteristic frequencies of the power semiconductor device and the radiators thereof; and the health states of different positions inside and outside the power semiconductor device are reflected through a plurality of thermal impedance characteristic frequency change trends. According to the invention, the internal and external health states of the power semiconductor device can be efficiently and non-invasively detected at low cost.

Description

technical field [0001] The present invention relates to the technical field of power electronics, in particular to a method for evaluating the health status of a power semiconductor device based on the characteristic frequency of thermal impedance. Background technique [0002] Power devices are one of the most vulnerable components in converters. Monitoring the status of power semiconductor devices and judging their health status can effectively improve the reliability of power electronic systems. In recent years, the frequency domain thermal impedance model is gradually attracting people's attention, because compared with the traditional Foster and Cauer model, it can accurately predict the temperature characteristics of power semiconductor devices in the whole frequency band. However, the existing methods for reflecting the health status are all based on time-domain analysis. The application is relatively complex and needs to solve a large number of parameters. Using freq...

Claims

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Application Information

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IPC IPC(8): G01R31/26G06F30/398G06F119/02G06F119/04
CPCG01R31/2601G06F30/398G06F2119/02G06F2119/04G06F2119/08
Inventor 马柯钟权
Owner SHANGHAI JIAO TONG UNIV
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