Semiconductor device and forming method thereof

Abstract

The invention relates to a semiconductor device and a method of forming the same. A device includes a first transistor over a substrate, a second transistor disposed over the first transistor, and a memory element disposed over the second transistor. The second transistor includes a channel layer, a gate dielectric layer surrounding a sidewall of the channel layer, and a gate electrode surrounding a sidewall of the gate dielectric layer.

Description

technical field [0001] The present disclosure relates to semiconductor devices and methods of forming the same. Background technique [0002] Many modern electronic devices contain electronic memory. Electronic memory can be either volatile memory or nonvolatile memory. Non-volatile memory retains its stored data when power is removed, while volatile memory loses its stored data when power is removed. Emerging memories such as resistive random-access memory (RRAM), magnetoresistive random-access memory (MRAM), and phase-change random-access memory (PCRAM) are due to their simple structures and their compatibility with complementary metal-oxide-semiconductor (CMOS) CMOS) logic fabrication process compatibility makes it a promising candidate for next-generation non-volatile memories. Contents of the invention [0003] According to a first aspect of the present disclosure, there is provided a semiconductor device, including: a first transistor arranged on a substrate; a se...

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Problems solved by technology

Non-volatile memory retains its stored data when power is removed while volatile memory loses its stored data when power is removed

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