Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Inspection apparatus adjustment system and inspection apparatus adjustment method

A technology for inspecting devices and adjusting systems, applied to measuring devices, image enhancement, instruments, etc., can solve problems such as reducing wafer production efficiency

Active Publication Date: 2021-12-07
HITACHI HIGH-TECH CORP
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the CD-SEM is installed in the production line, if the CD-SEM is stopped for adjustment, the wafer production efficiency will be reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inspection apparatus adjustment system and inspection apparatus adjustment method
  • Inspection apparatus adjustment system and inspection apparatus adjustment method
  • Inspection apparatus adjustment system and inspection apparatus adjustment method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] exist figure 1 The inspection device automatic adjustment system according to the first embodiment is shown. The inspection device automatic adjustment system includes a model DB 101 , an analysis condition setting IF 102 , an analysis execution unit 103 , an analysis result DB 104 , an observation condition setting IF 105 , a wafer pattern search unit 106 , an optical condition extraction unit 107 , and an optical condition setting unit 108 . The model DB 101, the analysis condition setting IF 102, the analysis execution unit 103, and the analysis result DB 104 are used as the analysis result DB creation unit 109, and the observation condition setting IF 105, the wafer pattern search unit 106, the optical condition extraction unit 107, and the optical condition setting unit 108 serves as an optimal optical condition extraction unit 110 .

[0032] The configuration of the analysis result DB creation unit 109 will be described. In the analysis result DB creation part 1...

Embodiment 2

[0056] Next, in Figure 9 The inspection device automatic adjustment system according to the second embodiment is shown. In Embodiment 2, the analysis result DB creation unit 109 is connected to various devices and databases via the network 901 . Furthermore, the specification can be received via the network 901, or the analysis result DB 104 can be shared among a plurality of inspection devices. In other words, cloudification of the analysis result DB creating unit 109 is realized.

[0057] For example, suppose that after delivery of the inspection apparatus, the optical conditions need to be re-set even when the specifications of the inspected wafers are greatly different, but there is no wafer model in the model DB. Therefore, the analysis result DB creation unit 109 of the inspection device automatic adjustment system is built in a PC within the inspection device manufacturer, and the optimal optical condition extraction unit 110 is installed in the inspection device bod...

Embodiment 3

[0060] exist Figure 10 show Figure 8 Additional examples of extraction methods for optimal optical conditions are shown. This is an extraction flow of optimal optical conditions assuming the case of measuring the width of the bottom of a deep hole. In order to measure the width with high precision, it is necessary to focus on the bottom, but in actual wafers, the depth may vary. The processing performed in the optical condition extraction unit 107 to solve this will be described below.

[0061]First, an estimated value of the depth deviation is set (step 1001). This is set based on past performance values ​​and information from customers. For example, the difference between the actual depth performance value in past inspections input via the observation condition setting IF 105 and the depth included in the information from the customer is calculated and used as an estimated value.

[0062] Next, an optimal optical condition obtained from an analytical model (wafer mode...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention addresses the problem of quickly specifying an optical condition of an inspected object, namely a wafer, and in particular, accelerating optical condition setting after obtaining a customer wafer. An inspection apparatus automatic adjustment system according to the present invention comprises: an analysis condition setting IF (102) which inputs analysis conditions; an analysis execution unit (103) which performs analysis; an inspection device model and model DB (101) used for analysis; an analysis result DB (104) that stores analysis results; an observation condition setting IF (105) which inputs a wafer pattern, a focus point, an optimization index, and a priority; a wafer pattern search unit (106) which searches for a wafer pattern similar to the input wafer pattern; an optical condition extraction unit (107) which extracts, from the analysis result DB (104), the optimum optical condition for the similar wafer pattern and the focus point; and an optical condition setting unit (108) which generates a control signal corresponding to the optical condition and transmits the control signal to the inspection apparatus.

Description

technical field [0001] The present invention relates to the technology of an inspection device for automatically adjusting a sample. In addition, the sample includes a semiconductor wafer (hereinafter also referred to as a wafer). In addition, the inspection device also includes an observation device. Background technique [0002] There is a SEM (Scanning Electron Microscope) as an inspection device that irradiates a sample with electron beams (primary electrons) and detects signal electrons (secondary electrons) secondary generated from the sample to obtain an image. In particular, SEM is used in an inspection apparatus for inspecting a semiconductor wafer, and there is CD-SEM (Critical Dimension SEM, critical dimension SEM) as one of them. The miniaturization of semiconductors is advancing every year, and CD-SEMs are required to increase resolution, increase measurement reproducibility, and reduce measurement errors between inspection devices. In order to obtain a high-...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCG01N21/9501G03F7/70625G03F7/705H01J2237/2816H01J37/265H01J2237/216H01J37/28G01N2223/6116G01N23/2251H01L22/12G01N2223/646G06T7/0004G06T2207/10061G06T2207/30148
Inventor 前田太一笹气裕子
Owner HITACHI HIGH-TECH CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products