Phase change memory device and forming method thereof

Abstract

In certain aspects, a memory device includes a plurality of bit lines, a plurality of word lines, and a plurality of memory cells. Each of the plurality of memory cells is disposed at an intersection of a respective one of the plurality of bit lines and a respective one of the plurality of word lines. Each of the plurality of memory cells includes a stacked phase change memory (PCM) element and a selector. The PCM element includes a top surface and a bottom surface. An area of the top surface is smaller than an area of the bottom surface.

Description

technical field [0001] The present disclosure relates to phase change memory (PCM) devices and methods of manufacturing the same. Background technique [0002] Planar memory cells are scaled to smaller sizes through improvements in process technology, circuit design, programming algorithms, and fabrication processes. However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become challenging and costly. As a result, the storage density of planar memory cells approaches an upper limit. [0003] Three-dimensional (3D) memory architectures can address density limitations in planar memory cells. A 3D memory architecture includes a memory array and peripheral devices for controlling signals to and from the memory array. For example, PCM can exploit the difference between the resistivity of the amorphous phase and the crystalline phase in the phase change material based on electrothermal heating and quenching of the ph...

AI Technical Summary

Problems solved by technology

However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become challenging and costly

As a result, the storage density of planar memory cells approaches the upper limit

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