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Polishing pad, preparation method thereof and preparation method of semiconductor device by using same

A technology of grinding sheet and volume, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, manufacturing tools, etc. shape and other problems to achieve the effect of improving the grinding rate

Pending Publication Date: 2021-12-21
SK恩普士有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the method of using a solid-phase blowing agent has the following problems. That is, it is difficult to freely adjust the form of the solid-phase blowing agent. Agglomeration of solid-phase blowing agent may occur in the inner part of the abrasive sheet

Method used

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  • Polishing pad, preparation method thereof and preparation method of semiconductor device by using same
  • Polishing pad, preparation method thereof and preparation method of semiconductor device by using same
  • Polishing pad, preparation method thereof and preparation method of semiconductor device by using same

Examples

Experimental program
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Effect test

Embodiment 1

[0349] Embodiment 1. Manufacture of grinding sheet

[0350] ( 1 ) Preparation of urethane prepolymer

[0351] Put polytetramethylene ether glycol (polytetramethylene etherglycol, South Korea (Korea) PTG company) as polyhydric alcohol, toluene diisocyanate (toluenediisocyanate, BASF (BASF) company) as isocyanate compound into four-necked flask, utilize inert gas Nitrogen (N 2 ) was filled in the reactor, and the reaction was carried out at 75° C. for 2 hours while stirring, thereby preparing a urethane prepolymer. In this case, the NCO% was adjusted to 9.1%.

[0352] ( 2 ) Manufacture of abrasive discs

[0353] A tank for separately supplying raw materials such as a urethane prepolymer, a curing agent, and a foaming agent, and a dispensing device equipped with a feeding line were prepared. As previously prepared urethane prepolymer, curing agent, 4,4'-methylenebis(2-chloroaniline) (MOCA, 4,4'-Methylne bis(2-chloroaniline) Sigma-Aldrich (sigma-aldrich) company). The ...

Embodiment 2 to Embodiment 5

[0359] In addition to adjusting the surface roughness volume parameter and the surface roughness height parameter of the abrasive sheet before and after grinding to the conditions shown in table 3 and table 4 by changing the surface processing conditions of the abrasive sheet to be manufactured, the implementation and In the same way as in Example 1, a grinding sheet was obtained.

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Abstract

The embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, to a process for preparing the same, and to a process for preparing a semiconductor device by using the same. The polishing pad according to the embodiment adjusts the surface roughness characteristics of the polishing pad after polishing, whereby the polishing rate can be enhanced, and the surface residues, surface scratches, and chatter marks of the wafer can be remarkably reduced.

Description

technical field [0001] Examples of the present invention relate to a polishing sheet whose surface roughness characteristics after polishing are adjusted, a method of manufacturing the same, and a method of manufacturing a semiconductor device using the same. Background technique [0002] In the semiconductor manufacturing process, the chemical mechanical polishing process is a process in which a semiconductor substrate such as a wafer is attached to the head and is in contact with the surface of the polishing sheet formed on the platen. Next, a chemical reaction occurs on the surface of the semiconductor substrate by supplying the slurry, and the platform and the head move relative to each other, thereby mechanically flattening the concave-convex part of the surface of the semiconductor substrate. [0003] A polishing sheet is an essential raw material that plays an important role in this chemical mechanical polishing process. It is usually formed of polyurethane resin, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/12B24D18/00B24B1/00H01L21/306H01L21/66
CPCB24B37/12B24D18/009B24B1/00H01L21/30625H01L22/12H01L22/26B24B37/24B24D18/0009H01L21/31053
Inventor 安宰仁金京焕尹晟勋徐章源明康植
Owner SK恩普士有限公司