Refresh command protection method and circuit, memory refreshing method and circuit, and equipment

A technology for protecting circuits and commands, which is applied in the field of memory refresh circuits and electronic equipment, and can solve problems such as failure of memory units to perform refresh operations and leakage risks, so as to reduce the probability of leakage risks and ensure smooth execution

Pending Publication Date: 2021-12-21
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, if the single-array refresh command is continuously issued in the normal refresh mode, if the single-array refresh command is con

Method used

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  • Refresh command protection method and circuit, memory refreshing method and circuit, and equipment
  • Refresh command protection method and circuit, memory refreshing method and circuit, and equipment
  • Refresh command protection method and circuit, memory refreshing method and circuit, and equipment

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Embodiment Construction

[0063] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals denote the same or similar parts in the drawings, and thus their repeated descriptions will be omitted.

[0064] Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided in order to give a thorough understanding of embodiments of the present disclosure. However, those skilled in the art will appreciate that the technical solutions of the present disclosure may be practiced without one or mo...

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PUM

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Abstract

The invention relates to a refresh command protection method, a refresh command protection circuit, a memory refresh method, a memory refresh circuit, and electronic equipment, and relates to the technical field of integrated circuits. The refresh command protection method comprises the following steps: acquiring a preset refresh configuration signal, a refresh window signal, and a refresh command; When the preset refresh configuration signal is in a normal refresh mode, and if the refresh command is a single-array refresh command, converting the normal refresh mode into a fine-grained refresh mode according to the single-array refresh command and the refresh window signal; in the fine-grained refresh mode, controlling a single-array refresh command to be executed. According to the embodiment of the invention, smooth execution of single-array refresh commands can be ensured, and the probability of electric leakage risks of storage units is reduced.

Description

technical field [0001] The present disclosure relates to the technical field of integrated circuits, and in particular, to a refresh command protection method, a refresh command protection circuit, a memory refresh method, a memory refresh circuit, and electronic equipment. Background technique [0002] Double Data Rate fifth-generation Synchronous Dynamic Random-Access Memory (DDR5 SDRAM) is a high-bandwidth computer memory. [0003] There are usually two refresh modes and two types of refresh commands in DDR5. Wherein, two refresh modes include: a normal refresh mode and a fine-grained refresh mode; two types of refresh commands include: a full array refresh command and a single array refresh command. Full-array refresh commands can generally be executed in both refresh modes, while single-array refresh commands can only be executed in fine-grained refresh mode. If a single-array refresh command is issued in the normal refresh mode, the current single-array refresh comma...

Claims

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Application Information

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IPC IPC(8): G11C11/406
CPCG11C11/406
Inventor 范习安曹先雷
Owner CHANGXIN MEMORY TECH INC
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