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High-power integrated circuit lead frame structure

An integrated circuit and lead frame technology, applied in the field of high-power integrated circuit lead frame structure, can solve the problems of affecting the firmness of riveting, affecting heat dissipation, affecting heat dissipation effect, etc., achieving good product consistency and increasing heat dissipation area. , combined with a solid and reliable effect

Pending Publication Date: 2021-12-24
厦门捷昕精密科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] 1. Due to the large power and high heat dissipation of the high-power integrated circuit lead frame, sufficient heat dissipation is required to ensure the normal operation of the device. The lead sheet 20 is riveted to the side of the heat dissipation plate 10, and the heat dissipation area of ​​the heat dissipation plate is limited to the side of the riveting position. Can extend in one direction, affecting the heat dissipation effect;
[0004] 2. The heat dissipation plate 10 and the lead sheet 20 are riveted at a single point, which is easily affected by mold processing or production errors to affect the parallelism between the plane of the heat dissipation plate and the plane of the lead sheet, which affects the firmness of the riveting, and easily causes the heat dissipation surface to be damaged. Glue overflow
[0005] 3. The heat dissipation surface of the heat dissipation plate 10 is the burr surface after punching, and the edge is not very smooth due to punching burrs and other reasons. The heat dissipation surface needs to be exposed during packaging, and the edge combined with the plastic body is not smooth enough to easily produce glue overflow , that is, the plastic penetrates into the copper heat dissipation surface, which seriously affects the heat dissipation and causes the product to be scrapped
[0006] 4. The wire bonding area of ​​the wire sheet 20 and the cooling plate 10 are affected by the characteristics of the riveting structure, and the height difference between them is uncontrollable, so that there is a drop between the wire bonding area of ​​the wire sheet 20 and the chip during wire bonding, thereby affecting the wire bonding effect , while increasing the bonding wire distance
[0007] 5. The cooling plate and lead sheet are fully electroplated with silver, which cannot effectively control the silver plating area, which greatly wastes the cost of silver plating

Method used

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  • High-power integrated circuit lead frame structure
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  • High-power integrated circuit lead frame structure

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Embodiment Construction

[0040] Such as Figure 5A-Figure 5C As shown, the present invention is a high-power integrated circuit lead frame structure, including a heat dissipation plate 1 on which a chip 3 is placed and a lead sheet 2 where the leads connecting the chip 3 are located; the heat dissipation plate 1 and the lead sheet 2 are fixed by riveting For connection, there is a cavity 21 in the middle of the lead sheet 2, and the cavity 21 is a rectangular groove, and the periphery of the cavity 21 is a welding wire area 22.

[0041] The back side of the heat dissipation plate 1 is a heat dissipation area 14, the back side of the heat dissipation plate 1 is fixed on the lead sheet 2, the front middle part of the heat dissipation plate 1 is a chip-attaching area 11, and the periphery of the chip-attaching area 11 is provided with two roads surrounding the chip-attaching area 11 V-shaped pressure groove 12, so that the plastic body flows into the V-shaped pressure groove during packaging, and four ri...

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Abstract

The invention discloses a high-power integrated circuit lead frame structure. The high-power integrated circuit lead frame structure comprises a heat dissipation plate for placing a chip and a lead slice where a lead connected with the chip is located, the heat dissipation plate is fixedly connected with the lead sheet in a riveting mode, a cavity is formed in the middle of the lead sheet, and the lead frame is arranged at the periphery of the cavity. As a chip attaching area of the heat dissipation plate is riveted with the lead sheet through a rivet, the heat dissipation plate is firmly combined with the lead sheet; and moreover, the V-shaped pressing grooves are designed around the chip pasting area of the heat dissipation plate, so that the plastic body flows into the grooves during packaging, impurities in the environment are prevented from permeating into the grooves, so that the effective combination among the plastic body, a chip and the heat dissipation plate is ensured, the common layering problem of electronic packaging is prevented, and the product reliability is high.

Description

technical field [0001] The invention relates to an integrated circuit structure, in particular to a high-power integrated circuit lead frame structure. Background technique [0002] Such as figure 1 , figure 2 As shown, in the prior art, there is a high-power integrated circuit lead frame, and the heat sink 10 and the lead sheet 20 are formed by single-point riveting. This riveted lead frame has the following disadvantages: [0003] 1. Due to the large power and high heat dissipation of the high-power integrated circuit lead frame, sufficient heat dissipation is required to ensure the normal operation of the device. The lead sheet 20 is riveted to the side of the heat dissipation plate 10, and the heat dissipation area of ​​the heat dissipation plate is limited to the side of the riveting position. Can extend in one direction, affecting the heat dissipation effect; [0004] 2. The heat dissipation plate 10 and the lead sheet 20 are riveted at a single point, which is ea...

Claims

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Application Information

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IPC IPC(8): H01L23/495H01L23/31H01L23/367
CPCH01L23/49568H01L23/4952H01L23/3672H01L23/495H01L23/49582H01L23/3114
Inventor 丘文雄林桂贤林国栋颜丁双林雪辰
Owner 厦门捷昕精密科技股份有限公司