Semiconductor light-emitting element

A light-emitting element and semiconductor technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of increased current density of the electrode layer and deterioration of the electrode layer, and achieve the effect of suppressing electromigration and suppressing the increase of driving voltage

Pending Publication Date: 2022-01-14
新唐科技日本株式会社
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, if there is a portion where the width of the electrode changes, the current density of the electrode layer locally increa

Method used

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  • Semiconductor light-emitting element
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  • Semiconductor light-emitting element

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0050] (Embodiment)

[0051] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In addition, the embodiments described below have shown a specific example of the present invention. Thus, the value, shape, material, constituent element, constituent element of the following embodiments, and the sequential sequence of the steps and the steps and the steps of the step are not intended to limit the invention.

[0052] Further, each figure is a schematic, and it is not necessarily strictly illustrated. Thus, the proportional rule in each figure is not necessarily consistent. Further, in each of the drawings, the same indicia, omit or simplify repetition is given to the substantially the same structure.

Example Embodiment

[0053] (Embodiment 1)

[0054] [Semiconductor LED]

[0055] First, use figure 1 The structure of the semiconductor light-emitting element 1 of the first embodiment will be described. exist figure 1 In, (a) is a plan view of the semiconductor light-emitting element 1 of Embodiment 1, (b) is a vertical cross-sectional view of the semiconductor light-emitting element 1 of the A-A line of (a), (c) is (c) B-B of (b) The horizontal cross-sectional view of the semiconductor light-emitting element 1 of the line. In addition, figure 1 In order to easily understand the positional relationship of each component, a shadow is also applied in the plan view of (a). This is also the same in the following figures.

[0056] likefigure 1 As shown, the semiconductor light-emitting element 1 of Embodiment 1 has a semiconductor laminated structure 10 and an N-side electrode 20 and a P-side electrode 30 disposed at semiconductor laminated structural 10. In the present embodiment, the semiconductor light...

Example Embodiment

[0216] (Embodiment 2)

[0217] Then Figure 22 The semiconductor light-emitting element 1H of the second embodiment will be described. exist Figure 22 In the middle, (a) is a plan view of the semiconductor light-emitting element 1H of the second embodiment, (b) is a vertical cross-sectional view of the semiconductor light-emitting element 1H of the A-A line of (a), (c) is B-B of (b) The horizontal cross-sectional view of the semiconductor light-emitting element 1H of the line.

[0218] The semiconductor light-emitting element 1H of the present embodiment is different from the semiconductor light-emitting element 1 of the first embodiment, and the structure of the N-side electrode is different.

[0219] Specifically, in the semiconductor light-emitting element 1 of the first embodiment, the N-side electrode layer 21 of the n-side electrode 20 has the first metal layer 21a, the second metal layer 21b, and the third metal layer 21c, but in the present embodiment. Semiconductor light-e...

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Abstract

A semiconductor light-emitting element (1) comprises: a semiconductor layer that comprises a chemical compound semiconductor; and an n-side electrode (20) that is positioned on the semiconductor layer and has a feed section (E1) and an extension section (E2) extending from the feed section (E1), wherein the width of the feed section (E1) is greater than the width of the extension section (E2), the n-side electrode (20) has an n-side electrode layer (21) positioned on the semiconductor layer side, and an n-side wiring layer (22) positioned on the n-side electrode layer (21), the n-side electrode layer (21) has a first metal layer (21a) positioned in the feed section (E1), and a second metal layer (21b) positioned further to the extension section (E2) side than the first metal layer (21a) and connecting directly to the first metal layer (21a), the first metal layer (21a) and the second metal layer (21b) ohmically connect to the semiconductor layer, the conductivity rate of the first metal layer (21a) is greater than the conductivity rate of the second metal layer (21b), and the n-side wiring layer (22) is positioned continuously on the first metal layer (21a) and the second metal layer (21b).

Description

technical field [0001] The present invention relates to semiconductor light emitting elements. Background technique [0002] Semiconductor light emitting elements such as LEDs (Light Emitting Diodes) are used as light sources for various devices such as lighting and displays. Among various light sources, LEDs are used in automotive lighting devices such as DRL (Daytime Running Lights) and HL (Head Lamp) in the field of large light output. light source. [0003] A semiconductor light emitting element includes, for example, an active layer (light emitting layer), semiconductor layers on both sides of the active layer, and electrodes. The electrode has an electrode layer in ohmic contact with the semiconductor layer and a wiring layer stacked on the electrode layer. In plan view, electrodes are sometimes formed to have portions that vary in width. In this case, portions with varying widths are respectively formed in the electrode layer and the wiring layer constituting the ...

Claims

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Application Information

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IPC IPC(8): H01L33/38
CPCH01L33/38H01L33/44H01L33/405H01L33/32H01L33/40
Inventor 政元启明大屋满明林茂生广木均典粂雅博西川学
Owner 新唐科技日本株式会社
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