Semiconductor structure with redundant structure, manufacturing method thereof and electronic equipment

Abstract

The invention relates to a semiconductor structure, a manufacturing method thereof and electronic equipment. The assembly includes a substrate, a plurality of bulk acoustic resonators, and at least one redundant structure. The at least two resonators are stacked on one side of the substrate to form a resonator stacked unit. An acoustic decoupling layer is arranged between the top electrode of the lower resonator and the bottom electrode of the upper resonator, and the acoustic decoupling layer forms an acoustic mirror of the upper resonator. The at least one redundant structure and at least one resonator in the plurality of resonators are stacked on the side of the substrate to form a redundant stacked unit, the redundant stacked unit and the resonator stacked unit are arranged side by side on the side of the substrate in the horizontal direction, and the redundant structure comprises a redundant piezoelectric layer; the redundant piezoelectric layer and a corresponding piezoelectric layer in the resonator stacking unit are arranged on the same layer, and a top electrode, a piezoelectric layer and a bottom electrode of a resonator in the redundant stacking unit and a top electrode, a piezoelectric layer and a bottom electrode of a resonator on the same layer in the resonator stacking unit are arranged on the same layer.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, in particular to a semiconductor structure and a manufacturing method thereof, and an electronic device with the resonator component. Background technique [0002] With the rapid development of today's wireless communication technology, the application of miniaturized portable terminal equipment is becoming more and more extensive, so the demand for high-performance, small-sized RF front-end modules and devices is also increasingly urgent. In recent years, filter devices such as filters and duplexers based on, for example, Film Bulk Acoustic Resonators (FBAR) are becoming more and more popular in the market. On the one hand, it is due to its excellent electrical properties such as low insertion loss, steep transition characteristics, high selectivity, high power capacity, and strong anti-electrostatic discharge (ESD) capability; on the other hand, it is also due to its small si...

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Problems solved by technology

[0004] In addition, in the existing design, bulk acoustic wave resonators are combined in series and parallel to form a filter. Multiple resonators need to be formed on one substrate. Each resonator is separated at different horizontal positions of the substrate and connected by horizontal metal leads, such as figure 1 As shown, the top electrode 104 of the resonator 100 is connected to the bottom electrode 102 of the resonator 200 through the conductive via 10 in the dotted frame. The connection width of the electrode 104, the width of the conductive via 10, the width of the top electrode 104 of the resonator 100, and the width of the bottom electrode 102 of the resonator 200 all have certain requirements. Generally, the total length is >5 μm, which leads to the introduction of a relatively large connection line. Large electrical loss, especially for high-frequency resonators, when the electrode thickness is <1000A, the insertion loss will deteriorate by more than 0.1dB

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