Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Atomic layer deposition equipment

An atomic layer deposition and equipment technology, applied in coatings, metal material coating processes, gaseous chemical plating, etc., can solve problems affecting the uniformity of film thickness, poor pollutant evacuation effect, and poor film thickness uniformity, etc. To achieve the effect of good emptying effect, good uniformity and improved efficiency

Pending Publication Date: 2022-03-01
合肥欣奕华智能机器股份有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the shell of the existing atomic layer deposition equipment is generally a square shell. During the process of emptying the pollutants, the pollutants reciprocate at the 90° angle of the reaction chamber to form an annular air flow, so that the pollutants remain in the chamber. The corner cannot be discharged, resulting in poor emptying effect of pollutants
The remaining pollutants will affect the uniformity of the thickness of the film formed on the surface of the substrate, making the uniformity of the film thickness poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Atomic layer deposition equipment
  • Atomic layer deposition equipment
  • Atomic layer deposition equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0030] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms, "upper", "lower", "front", "inner", etc. is based on the orientation or positional relationship shown in the accompanying drawings, only It is for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
pore sizeaaaaaaaaaa
pore sizeaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses atomic layer deposition equipment, relates to the technical field of atomic layer deposition, and can improve the emptying effect of pollutants and improve the uniformity of the thickness of a thin film. The atomic layer deposition equipment comprises a shell, a reaction cavity is defined by the shell, and the shell is provided with an air inlet and an air outlet which are communicated with the reaction cavity. The air outlet is communicated with a vacuum pump. The side wall of the reaction cavity is a curved surface. The atomic layer deposition equipment is used for carrying out atomic layer deposition.

Description

technical field [0001] The present application relates to the technical field of atomic layer deposition, in particular to an atomic layer deposition equipment. Background technique [0002] Atomic layer deposition is a process in which substances are deposited layer by layer in the form of single atomic films. The atomic layer deposition equipment includes a shell, which encloses a reaction chamber, and the substrate to be coated is placed in the reaction chamber. During the process of performing atomic layer coating on the substrate, the first reaction precursor and the second reaction precursor are sequentially introduced into the reaction chamber. When the second reaction precursor is introduced into the reaction chamber, the second reaction precursor will react with the first reaction precursor that has been adsorbed on the surface of the substrate to generate corresponding products. Next, repeat the above step of feeding the first reaction precursor and the second re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
CPCC23C16/45544
Inventor 李灿曹景博
Owner 合肥欣奕华智能机器股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products