Semiconductor device and preparation method thereof
A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve problems such as chip strength defects
Pending Publication Date: 2022-03-01
YANGTZE MEMORY TECH CO LTD
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- Application Information
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Problems solved by technology
However, the current chip has strength defects
Method used
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[0051] In order to make the above objects, features and advantages of the present application more clearly understood, the specific embodiments of the present application will be described in detail below with reference to the accompanying drawings.
[0052] Many specific details are set forth in the following description to facilitate a full understanding of the present application, but the present application can also be implemented in other ways different from those described herein, and those skilled in the art can do so without departing from the connotation of the present application. Similar promotion, therefore, the present application is not limited by the specific embodiments disclosed below.
[0053] As described in the background art, the current chip has a strength defect. The inventor found through research that in a semiconductor device, the isolation structure for isolating different functional units has a rectangular parallelepiped structure with a large aspect...
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The invention provides a semiconductor device and a manufacturing method thereof, the semiconductor device comprises a functional layer on one side of a substrate and a connecting line on one side, away from the substrate, of the functional layer, the functional layer can comprise a plurality of functional units and an isolation structure penetrating through the functional layer in a direction perpendicular to the surface of the substrate, the isolation structure extends in a direction parallel to the surface of the substrate so as to divide the plurality of functional units into a plurality of groups; the connecting lines are used for being electrically connected with the functional units, and the isolation structures and the functional layers are different in forming mode and extending direction, so that the contact positions of the isolation structures and the functional layers are poor in mechanical strength and prone to breakage, and the projections of the isolation structures and the connecting lines on the surface of the substrate can be arranged to intersect. Therefore, the connecting line can be arranged right above the isolation structure, and the connecting line is arranged across the isolation structure, so that the mechanical strength of the contact position of the isolation structure and the functional layer can be enhanced, and the overall mechanical strength of the semiconductor device is enhanced.
Description
technical field [0001] The present application relates to the field of semiconductor technology, and in particular, to a semiconductor device and a preparation method thereof. Background technique [0002] Existing electronic products have increasingly strong demand for large-capacity and ultra-thin chips. For this reason, the chip manufacturing process is constantly improving, and the number of stacked layers of chips is increased to meet the requirements of large-capacity. The thickness of the layer chip must also be reduced, and the thinned chip needs to have sufficient strength to ensure the reliability of the chip stacking. However, the current chip has a strength defect. SUMMARY OF THE INVENTION [0003] In order to solve the above technical problems, the present application provides a semiconductor device and a manufacturing method thereof, so as to improve the mechanical strength of the semiconductor device. [0004] Embodiments of the present application provide...
Claims
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IPC IPC(8): H01L23/528H01L23/00H01L21/768H01L27/11582H01L27/1157H10B43/27H10B43/35
CPCH01L23/528H01L23/562H01L21/76838H10B43/35H10B43/27
Inventor 潘震伍术
Owner YANGTZE MEMORY TECH CO LTD