Diamond-silicon carbide composite material, preparation method and electronic equipment

A composite material and diamond technology, applied in the field of thermal management application materials, can solve problems such as the decline of the comprehensive performance of composite materials, and achieve the effect of avoiding negative effects

Pending Publication Date: 2022-03-11
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the graphitization problem often occurs in diamond during the preparation process, which leads to the decline of the comprehensive performance of the composite material and the process technology of near-net size and continuous preparation of diamond-silicon carbide composite materials with high solid content is still a key issue.

Method used

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  • Diamond-silicon carbide composite material, preparation method and electronic equipment
  • Diamond-silicon carbide composite material, preparation method and electronic equipment
  • Diamond-silicon carbide composite material, preparation method and electronic equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] combine figure 1 As shown, a method for preparing a diamond-silicon carbide composite material is provided in an embodiment of the present invention, including:

[0033] S101. Add diamond powder and silicon carbide powder to the pre-prepared gel premix, wherein the weight ratio of the diamond powder to the silicon carbide powder is (10-80):(20-90).

[0034] The diamond is generally available in the market, and the gel premix is ​​pre-prepared. The premix can use the acrylamide gel system premix. When configuring the acrylamide gel system premix, add a certain amount of acrylamide and methylenebisacrylamide , wherein acrylamide and methylenebisacrylamide account for 2-10% and 0.2-1% of the total mass of the powder respectively, the powder here includes diamond powder and silicon carbide powder, and the volume of the powder is the same as that of the acrylamide condensate The total volume of the glue system premix is ​​100%. The weight ratio of diamond powder and silicon...

Embodiment 2

[0048] The embodiment of the present invention also provides a second diamond-silicon carbide composite material preparation method, including:

[0049] S201. First, the acrylamide gel system is used to form a diamond-silicon carbide preform, and the process flow is as follows:

[0050] Configure acrylamide gel system premix night, the premix solution contains a certain amount of acrylamide, methylenebisacrylamide and other organic chemical reagents, wherein acrylamide and methylenebisacrylamide account for 2% of the total powder mass respectively ~10%, 0.2~1%. Add diamond powder and silicon carbide powder with a certain gradation respectively. The gradation is the distribution of particle sizes at all levels of the aggregate, which can be determined through sieve analysis tests. (wherein the powder volume and the premixed volume are 100%) ball milling for 24 hours, vacuum degassing for 30 minutes, adding a catalyst and an initiator, injecting the slurry into a mold, and dryi...

Embodiment 3

[0055] The embodiment of the present invention also provides a third diamond-silicon carbide composite material preparation method, including:

[0056] S301. First, add a certain amount of acrylamide, methylenebisacrylamide and other organic chemical reagents to configure the gel system premix, wherein acrylamide and methylenebisacrylamide account for 5% and 0.4% of the total mass of the powder, respectively. %, select silicon carbide powder and diamond powder with different particle sizes and add them into the premixed mixture with a mass fraction of 16:84, wherein the volume of the powder and the volume of the premixed mixture are 100% in total, after stirring evenly, ball mill for 24 hours, and the slurry is pumped Vacuum for 30 minutes, add the catalyst tetramethylethylenediamine and the initiator ammonium persulfate successively, wherein the catalyst and the initiator account for 0.03-0.09% and 0.3-0.9% of the total volume of the slurry respectively, and add them at a cert...

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Abstract

According to the diamond-silicon carbide composite material, the preparation method and the electronic equipment provided by the embodiment of the invention, the diamond powder and the silicon carbide powder are mixed with the gel premix, then wet ball milling is carried out to prepare the slurry, the mass ratio of the diamond powder to the silicon carbide powder is (10-80): (20-90), the slurry is injected into a mold for molding, and after drying and degreasing, the diamond-silicon carbide composite material is obtained. A diamond-silicon carbide prefabricated blank is obtained, liquid silicon is infiltrated into the prefabricated blank in a non-pressure mode in a vacuum environment, a compact diamond-silicon carbide sintered body is obtained, and silicon is high-purity silicon powder or silicon blocks. While the densified composite material is effectively prepared, the infiltration temperature of the liquid silicon is strictly controlled, and the negative influence caused by diamond graphitization is effectively avoided. The composite material has the advantages of high thermal conductivity, low expansion, low density, wear resistance and the like, and is an ideal thermal management application material.

Description

technical field [0001] The invention relates to the field of thermal management application materials, in particular to a diamond-silicon carbide composite material, a preparation method and electronic equipment. Background technique [0002] In recent years, with the rapid development of large-scale integrated circuits and the continuous shrinking of the chip size of electronic equipment, traditional electronic packaging materials have been unable to meet the requirements of modern integrated circuits, and high-performance electronic packaging materials have received more and more attention. For advanced thermal management materials, they should have higher thermal conductivity, a good match between thermal expansion coefficient and chip, suitable for industrial production, low dielectric constant, and good mechanical properties. Diamond is considered an ideal candidate due to its excellent thermal conductivity and low thermal expansion coefficient (thermal conductivity 200...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/52C04B35/565C04B35/622C04B35/624C04B35/638
CPCC04B35/52C04B35/565C04B35/622C04B35/624C04B35/638C04B2235/427C04B2235/3826C04B2235/428C04B2235/6581
Inventor 朱万利包建勋张舸崔聪聪徐传享
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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