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Programming and verifying method applied to multi-layer memory cell array

A multi-layer storage and storage unit technology, applied in the field of control of storage unit arrays, can solve problems such as unreachable

Pending Publication Date: 2022-03-15
EMEMORY TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Obviously, using Figure 1B The bias method will not achieve this effect

Method used

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  • Programming and verifying method applied to multi-layer memory cell array
  • Programming and verifying method applied to multi-layer memory cell array
  • Programming and verifying method applied to multi-layer memory cell array

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Embodiment Construction

[0029] According to the embodiment of the present invention, the present invention will Figure 1A The storage unit is used as a multi-level storage unit (multi-level cell), and forms a multi-level storage unit array. Since all memory cells in the memory cell array are multi-level memory cells, each memory cell has at least four storage states, and memory cells in different storage states will generate different magnitudes of memory cell current.

[0030] Such as figure 2 As shown, it is a schematic diagram of the storage cell array of the present invention. The storage unit array 200 includes m×n storage units c11˜cmn, wherein m and n are positive integers. Furthermore, each memory cell c11-cmn includes a selection transistor T 1,1 ~T m,n , a floating gate transistor M 1,1 ~ M m,n and a capacitor C 1,1 ~C m,n , the structure of each storage unit c11~cmn is the same as Figure 1A The detailed structure of the MTP storage unit 100 will not be repeated here. In addition...

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Abstract

A method for programming and verifying a multi-level memory cell array, the multi-level memory cell array comprising: a plurality of memory cells in a first column connected to a word line, a source line, an erase line and a plurality of bit lines, each of the memory cells being programmed to a target storage state during a program cycle, the target storage state is one of X storage states, and the programming and verification method comprises the following steps: (a1) determining the first column as a selected column, and setting A to be equal to 1; (a2) in the selected column, except the storage unit reaching the target state and the bad storage unit, programming other storage units to an A-th storage state; (a3) when A is not equal to X, adding 1 to A and returning to the step (a2); and (a4) when A is equal to X, ending the programming period; wherein, in the step (a2), a plurality of write operations and a plurality of verification operations are performed on the other memory cells of the selected column until the other memory cells reach the A-th storage state.

Description

technical field [0001] The present invention relates to a control method of a memory cell array, and in particular to a programming and verification method applied to a multi-layer memory cell array. Background technique [0002] As we all know, the non-volatile memory can continue to record data even after the power supply stops, so the non-volatile memory has been widely used in various electronic devices. Generally speaking, non-volatile memory can be divided into one-time programmable non-volatile memory (OTP non-volatile memory for short) and multiple times programmable non-volatile memory (OTP non-volatile memory) multi-time programmable non-volatile memory, referred to as MTP non-volatile memory). Furthermore, the OTP non-volatile memory includes a plurality of one-time programmable non-volatile storage units (abbreviated as OTP storage units), and the MTP non-volatile memory includes a plurality of multiple-time programmable non-volatile storage units (abbreviated a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34G11C16/10H10B41/60
CPCG11C16/3459G11C16/10G11C11/5628G11C2211/5624G11C16/045G11C16/0433G11C16/0441G11C11/54H01L29/7884H10B41/35G11C16/08G11C16/14G11C16/26
Inventor 陈英哲古惟铭孙文堂
Owner EMEMORY TECH INC