Wafer bearing device and process chamber

Abstract

The invention provides a wafer bearing device and a process chamber, the wafer bearing device comprises a base, an electrostatic chuck, a driving part and a plurality of jacking parts, the electrostatic chuck is arranged on the base and is used for adsorbing and bearing a wafer, and the electrostatic chuck can be selectively adsorbed with the base; the driving component is connected with the jacking components and used for driving the jacking components to ascend and descend, and the jacking components are used for penetrating through the base under driving of the driving component, abutting against the face, facing the base, of the electrostatic chuck and driving the electrostatic chuck to ascend and descend so that the electrostatic chuck can be separated from or attached to the base. According to the wafer bearing device and the process chamber provided by the invention, the utilization rate and the productivity of equipment can be improved, process components are saved, and the cost is reduced.

Description

technical field [0001] The present invention relates to the technical field of semiconductor equipment, in particular to a wafer carrying device and a process chamber. Background technique [0002] Electrostatic Chuck (ESC for short) can use Coulomb force (also known as electrostatic force) to absorb and carry wafers (Wafer). Compared with traditional mechanical chucks, it has more advantages. Therefore, electrostatic chucks replace mechanical The chuck is used in Physical Vapor Deposition (Physical Vapor Deposition, PVD for short) equipment. [0003] Such as figure 1 As shown, an existing physical vapor deposition process chamber 1 includes a chamber structure 11 and a carrier assembly 12, the chamber structure 11 is used to provide a physical vapor deposition process environment, and the carrier assembly 12 includes a heating base 121, an electrostatic chuck 122, a deposition ring 123 (Dep ring), a pressure ring 124 (Clamp Ring), a lifting drive part 125 and three thimbl...

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Problems solved by technology

[0004] However, the organic matter present in the wafer will be carbonized at high temperature, and a conductive carbon film will be formed on the surface of the electrostatic chuck 122, so that the resistance on the surface of the electrostatic chuck 122 will be reduced, causing the adsorption force of the electrostatic chuck 122 to decrease. The back pressure is abnormal, and the internal parts of the electrostatic chuck 122 are prone to damage under the long-term continuous bombardment of high-power plasma, which will also lead to abnormal back pressure. At this time, it may be necessary to cool down and open the process chamber 1. The electrostatic chuck 122 is replaced, and after replacing the new electrostatic chuck 122, the process chamber 1 is closed to raise the temperature, and, due to the opening of the process chamber 1, some process components need to be replaced at the same time in order to avoid particle problems , it takes a long time to restore the process environment of the process chamber 1 to normal production after replacing the process components and the electrostatic chuck 122, so it takes a long time (about 30 hours) to replace the electrostatic chuck 122, which affects physical vapor deposition. The utilization rate and production capacity of the process chamber 1, and the waste of process components, resulting in increased costs

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