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High electron mobility transistor and manufacturing method thereof

A technology of high electron mobility and manufacturing method, which is applied in the field of GaN high electron mobility transistors and its manufacturing, and can solve the problems such as the increase of conduction group

Pending Publication Date: 2022-03-29
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] For P-type GaN enhancement mode (enhancement mode or E-mode) high electron mobility transistors, in order to achieve normally-off (normally-off (threshold voltage Vth>0)) devices, the aluminum gallium nitride barrier layer must be reduced However, reducing the proportion of aluminum in the AlGaN barrier layer will face the problem of increasing the conduction group (Ron)

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  • High electron mobility transistor and manufacturing method thereof
  • High electron mobility transistor and manufacturing method thereof
  • High electron mobility transistor and manufacturing method thereof

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Embodiment Construction

[0051] In the following, details will be described with reference to the accompanying drawings, and the content in these drawings also constitutes a part of the detailed description of the specification, and is shown in a specific example in which the embodiment can be implemented. The following examples are described in sufficient detail to enable those of ordinary skill in the art to implement them.

[0052] Of course, other embodiments may also be adopted, or any structural, logical, and electrical changes may be made without departing from the embodiments described herein. Therefore, the following detailed description should not be taken as limiting, but rather the embodiments contained therein will be defined by the appended claims.

[0053] see Figure 1 to Figure 5 , which is a schematic cross-sectional view of a manufacturing method of a high electron mobility transistor according to an embodiment of the present invention. Such as figure 1 As shown, the high electro...

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Abstract

The invention discloses a high electron mobility transistor. The high electron mobility transistor comprises a substrate; the channel layer is arranged on the substrate; the aluminum gallium nitride layer is arranged on the channel layer; the P-type gallium nitride gate is arranged on the aluminum gallium nitride layer, the aluminum gallium nitride layer comprises a first region and a second region, and the composition of the first region is different from that of the second region.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride (GaN) high-electron mobility transistor (high-electron mobility transistor, HEMT) and a manufacturing method thereof. Background technique [0002] High electron mobility transistors are often used in high-frequency high-power amplifier components, which have the characteristics of high breakdown voltage, high saturation electron movement speed and high temperature operation. [0003] In a typical HEMT, a two-dimensional electron gas (2DEG) is generated at semiconductor heterojunctions. 2DEG represents a very thin conducting layer with highly mobile and highly concentrated charge carriers that are free to move in both dimensions of the conducting layer but are trapped perpendicular to the Movement in the third dimension of the conductive layer is restricted. Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) are particularly suitable for hig...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L21/335
CPCH01L29/7786H01L29/7787H01L29/66462H01L29/2003H01L29/1066H01L29/201H01L21/67109H01L21/67115H01L21/67063H01L21/67225H01L21/67236H01L29/7783H01L21/76864
Inventor 陈彦兴许祐铭杨宗穆王俞仁
Owner UNITED MICROELECTRONICS CORP