Formation method of fin structure and formation method of FinFET device
A device and fin technology, applied in the field of integrated circuit manufacturing, can solve the problems of tilting and bending of the fin structure, and achieve the effect of solving the tilting or bending
Pending Publication Date: 2022-04-12
SHANGHAI INTEGRATED CIRCUIT EQUIP & MATERIALS IND INNOVATION CENT CO +1
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[0004] The object of the present invention is to provide a method for forming a fin structure and a method for forming a FinFET device, so as to solve the problem of tilting or bending of the fin structure
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[0023] In order to make the purpose, advantages and features of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in very simplified form and not drawn to scale, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In addition, the structures shown in the drawings are often a part of the actual structure. In particular, each drawing needs to display different emphases, and sometimes uses different scales.
[0024] As used in the present invention, the singular forms "a", "an" and "the" include plural objects, the term "or" is usually used in the sense of including "and / or", and the term "several" Usually, the term "at least one" is used in the meaning of "at least one", and the term "at least two" is usually used in the meaning of "two or more". In a...
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The invention provides a fin structure forming method and a FinFET device forming method. The fin structure forming method comprises the following steps: providing a substrate; forming a first dielectric layer, and filling the space between the fins in the fin group and the surface of the substrate; forming a second dielectric layer to fill the fin group and cover the first dielectric layer; etching the second dielectric layer between the fin groups to form a groove; forming a third dielectric layer to fill the groove, wherein the first dielectric layer and the second dielectric layer have opposite types of stress; and executing a heat treatment process to form an isolation dielectric layer, removing a part of thickness of the isolation dielectric layer, and taking the exposed part of the fin as a fin structure. According to the invention, the first dielectric layer, the second dielectric layer and the third dielectric layer are filled among the fin groups, the first dielectric layer and the second dielectric layer have opposite stresses, and the stress of the third dielectric layer is smaller than the stresses of the first dielectric layer and the second dielectric layer, so that the stresses among the fin groups are balanced, and the stress difference between the two sides of the fin is reduced; and fin deformation is prevented.
Description
technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for forming a fin structure and a method for forming a FinFET device. Background technique [0002] With the continuous development of semiconductor technology, traditional planar devices have been difficult to meet people's demand for high-performance devices. Fin-Field-Effect-Transistor (FinFET) is a three-dimensional device, including fins formed vertically on the substrate and gate structures covering both sides of the fins. This design can greatly improve The circuit controls and reduces the leakage current, and can also greatly shorten the gate length of the transistor. [0003] However, in the formation process of the fin structure (fin) of the FinFET device, the deformation (bending or tilting) of the fin is very easy to occur, which is not conducive to the subsequent process (such as the formation of the source-drain structure in the fi...
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Login to View More IPC IPC(8): H01L21/336H01L29/06H01L29/10
Inventor 刘云珍
Owner SHANGHAI INTEGRATED CIRCUIT EQUIP & MATERIALS IND INNOVATION CENT CO