Chemical mechanical polishing method
A chemical-mechanical and grinding method technology, used in grinding machine tools, grinding tools, grinding devices, etc., which can solve the problems of poor film thickness uniformity, high polysilicon grinding rate, and low filling rate.
Active Publication Date: 2022-04-15
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
However, in the chemical mechanical polishing process of some products, the grinding rate of polysilicon is very high, and the filling speed of the micropores during the grinding process is lower than the cleaning speed during the dressing process of the grinding pad, resulting in the amount of abrasive particles and grinding by-products in the micropores less and less, thereby causing the grinding rate to gradually decrease, and the thickness of the wafer after grinding also increases with the increase of the number of wafers polished by the same polishing pad in the chemical mechanical polishing process, so that after chemical mechanical polishing The uniformity of the film thickness between each wafer becomes worse
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[0026] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. The advantages and features of the present invention will be more apparent from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0027] Hereinafter, the terms "first", "second", etc. are used to distinguish between similar elements, and are not necessarily used to describe a specific order or chronological order. It is to be understood that these terms so used are interchangeable under appropriate circumstances. Similarly, if the methods described herein comprise a series of steps, the steps presented herein are not necessarily the only order in which the steps may be performed, and some described steps may be omitted or some other steps no...
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The invention provides a chemical mechanical polishing method, which comprises the following steps of: polishing a batch of wafers one by one by using a chemical mechanical polishing device, trimming a polishing pad of the chemical mechanical polishing device every time at least two wafers are polished, in the chemical mechanical grinding process of the wafers, grinding by-products influencing the grinding rate can be generated, and the number of the wafers ground between every two times of finishing in the chemical mechanical grinding process and the finishing times in each time of finishing process are adjusted. The number of polishing by-products adhered to the polishing pad in the polishing process is adjusted, so that the polishing rate of the wafers is uniformized, and the uniformity of the film thickness between the wafers after a batch of wafers are subjected to chemical mechanical polishing is improved.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a chemical mechanical polishing method. Background technique [0002] In semiconductor manufacturing, with the upgrading of process technology and the shrinking of the size of wires and gates, lithography technology has higher and higher requirements for the flatness of the wafer surface (Non-uniformity). Combined with mechanical removal, it is a technology that can achieve global planarization in machining at present. [0003] In the process of polysilicon polishing (Poly CMP) on wafers with soft polishing pads, the by-products generated during the polishing process have an important contribution to the polishing rate. When the micropores in the polishing pad are After the grinding by-products generated in the process are fully filled, it helps to stabilize the grinding rate, and can also play a role in adjusting the stiffness of the grinding pad. When the micropore f...
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IPC IPC(8): B24B37/10B24B37/20B24B37/30B24B37/34
Inventor 程君李儒兴李协吉
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP