Diffusion furnace

A technology of diffusion furnace and furnace body, which is applied in the field of diffusion furnace and can solve problems such as inconsistent distribution of reaction gases

Pending Publication Date: 2022-04-22
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of this application is to at least solve the problem of inconsistency in the distribution of reaction gases in the diffusion furnace

Method used

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  • Diffusion furnace

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Embodiment Construction

[0020] Exemplary embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided for thorough understanding of the application and to fully convey the scope of the application to those skilled in the art.

[0021] It should be understood that the terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" may also be meant to include the plural forms unless the context clearly dictates otherwise. The terms "comprising", "comprising", "containing" and "having" are inclusive and thus indicate the presence of stated features, steps...

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Abstract

The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a diffusion furnace. The diffusion furnace comprises a furnace body, a plurality of gas leading-out ports and at least one exhaust port, a reaction cavity is defined in the furnace body, the plurality of gas leading-out ports are formed in the side wall of the reaction cavity at intervals in the axial direction of the furnace body, and the plurality of gas leading-out ports communicate with the at least one exhaust port. According to the diffusion furnace disclosed by the invention, the plurality of gas lead-out ports communicated with the exhaust port are arranged at intervals along the axial direction of the furnace body, so that gas which does not participate in reaction in the diffusion furnace can be discharged in time through the plurality of gas lead-out ports, and uniform distribution of reaction gas in the diffusion furnace is ensured; and inconsistent diffusion thickness of the wafer caused by accumulation of unreacted gas in the furnace body is prevented, so that the diffusion quality of the wafer is effectively improved.

Description

technical field [0001] The application belongs to the technical field of semiconductor manufacturing, and in particular relates to a diffusion furnace. Background technique [0002] The diffusion process is one of the most important doping processes in integrated circuit manufacturing. It diffuses phosphorus, boron and other atoms into the wafer under high temperature conditions, thereby changing and controlling the type, concentration and distribution of impurities in the semiconductor, so that Regions of different electrical characteristics are established. Most of the existing diffusion processes are carried out in batch processing mode, that is, multiple batches of wafers are put into the diffusion furnace at the same time for diffusion processing, which can greatly improve the production efficiency. [0003] The gas injected into the diffusion furnace reacts with the wafer fixed on the wafer boat to form a thin film on the wafer, and the gas that does not participate i...

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Application Information

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IPC IPC(8): C30B31/06C30B31/16H01L21/223
CPCC30B31/06C30B31/16H01L21/223
Inventor 郭世根李亭亭蒋浩杰田光辉项金娟熊文娟
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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