Method and system for forming silicon nitride on sidewalls of features

A silicon nitride, silicon nitride layer technology, applied in gaseous chemical plating, coatings, electrical components, etc., to achieve the effect of predictable device performance

Pending Publication Date: 2022-04-22
エーエスエムアイピーホールディングベーフェー
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Although the manner in which various embodiments of the present disclosure address shortcomings of existing methods, systems and structures will be discussed in greater detail below, in general, various embodiments of the present disclosure provide for the formation of nitrided surfaces on vertical surfaces. Improved methods for silicon

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  • Method and system for forming silicon nitride on sidewalls of features
  • Method and system for forming silicon nitride on sidewalls of features
  • Method and system for forming silicon nitride on sidewalls of features

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Embodiment Construction

[0022] While certain embodiments and examples are disclosed below, it will be understood by those skilled in the art that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention and obvious modifications and equivalents thereof. Accordingly, the scope of the disclosed invention should not be limited by the specific disclosed embodiments described below.

[0023] The present disclosure generally relates to methods of forming silicon nitride on sidewalls of features, structures including silicon nitride layers, and systems for performing the methods and / or forming the structures. As described in more detail below, various methods may be used to form structures including silicon nitride on the sidewall surfaces of features, with the desired silicon nitride remaining at the bottom of the sidewalls / features. Additionally or alternatively, silicon nitride on the sidewall surfaces may be formed in a more predictable manner and / or device perfor...

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Abstract

Methods of forming silicon nitride on sidewalls of a feature are disclosed. An exemplary method includes providing a substrate including a feature having a sidewall surface and a surface adjacent to the sidewall surface; forming a silicon oxide layer covering the sidewall surface and a surface adjacent to the sidewall surface; depositing a silicon nitride layer covering the silicon oxide layer using a cyclic deposition process; and exposing the silicon nitride layer to an active material generated by a hydrogen-containing gas. The example method may also include selectively removing a portion of the silicon nitride layer. A structure formed using the method and a system for performing the method are also disclosed.

Description

technical field [0001] The present disclosure generally relates to methods and systems for forming devices. More specifically, examples of the present disclosure relate to methods and systems for forming silicon nitride on a substrate surface. Background technique [0002] Silicon nitride layers can be used in a variety of applications during the formation of electronic devices. For example, silicon nitride layers can be used as dielectric layers, diffusion barriers, hard masks, spacers, and the like. [0003] In some applications, it may be desirable to form silicon nitride primarily on the sidewall surfaces of a feature, such that no or relatively little silicon nitride remains on surfaces adjacent to the sidewalls (eg, top and bottom surfaces). One technique for forming silicon nitride on sidewall surfaces includes depositing a thin conformal layer of silicon nitride, treating portions of the silicon nitride layer, and selectively removing the treated silicon nitride us...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762C23C16/34C23C16/455
CPCC23C16/345C23C16/455H01L21/76237H01L21/02H01L21/0217H01L21/0228H01L21/02274H01L21/02304H01L21/0234H01L21/31111H01L21/31116H01L21/0337H01L29/66795C23C16/045C23C16/401C23C16/45523C23C16/56C23C16/505H01L21/02164H01L21/02211H01L21/02219
Inventor 久保田智广上田真也
Owner エーエスエムアイピーホールディングベーフェー
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