A high precision interval current detection circuit

Abstract

The present application includes a high-precision interval current detection circuit, and specifically relates to the technical field of current detection. In this circuit, the drain of the MOS tube to be tested is connected to the inverting input terminal of the first comparator; the drain of the MOS tube to be tested is connected to the inverting input terminal of the second comparator; the drain of the first detection switch tube is connected to the inverting input terminal of the second comparator. The pole is connected to the non-inverting input terminal of the first comparator; the drain of the second detection switch tube is connected to the non-inverting input terminal of the second comparator; the gate of the MOS tube to be tested is connected to the gate of the first detection switch tube; The gate of the detection MOS tube is connected to the gate of the second detection switch tube; the drain of the first detection switch tube is grounded through the first branch of the first detection current mirror; the drain of the second detection switch tube passes through the second detection The first leg of the current mirror is grounded. Through the above circuit structure, the interval in which the current is located is detected more accurately, so that the current in each interval can be precisely controlled.

Description

technical field [0001] The invention relates to the technical field of current detection, in particular to a high-precision interval current detection circuit. Background technique [0002] In the circuit structure of the prior art, it is usually necessary to detect the current, and to generate a control signal according to the detection result of the current to control the circuit, so as to ensure the stable operation of the circuit. [0003] Current detection devices commonly used in integrated circuit chips such as figure 1 As shown, Mp0 is the power tube, responsible for the output current, Ms0 sampling tube, k0 is the width ratio of Mp0 and Ms0, and k0>>1, I o0 and V o0 are the output current and output voltage, respectively, I s0 and V s0 are the sampling current and the sampling voltage, respectively. In the process of current detection, the output current is sampled first, and the sampled current obtained is i s0 , and then let the sampling current i s Flow...

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Problems solved by technology

[0004] However, in the above scheme, because the drain voltages of Mp0 and Ms0 are different, they are V o0 and V s0 , the voltage difference between the two is large and uncontrollable, so that the mirror current ratio of Mp0 and Ms0 is not completely equal to k0:1, resulting in low current detection accuracy; at the same time, the current detection circuit in the prior art can only The current detection of a single value cannot realize the current detection of the interval, so that the current in a specific interval cannot be controlled

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