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GaN-based laser diode structure with hole passivation layer and manufacturing method

A technology of laser diode and passivation layer, applied in the structure of active area, structure of optical waveguide semiconductor, laser, etc., can solve the problems of unfavorable manufacturing and high refractive index requirements of insulating materials, and achieve the effect of reducing refractive index requirements

Pending Publication Date: 2022-05-27
安徽格恩半导体有限公司
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Problems solved by technology

But this for SiO 2 Refractive index requirements of insulating materials such as high, is not conducive to manufacturing

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  • GaN-based laser diode structure with hole passivation layer and manufacturing method
  • GaN-based laser diode structure with hole passivation layer and manufacturing method

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Embodiment Construction

[0040] In order to make the objectives, technical solutions and advantages of the present invention clearer, the structure of the GaN-based laser diode with a hole passivation layer and the manufacturing method of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be noted that, the following embodiments and features in the embodiments may be combined with each other unless there is conflict. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0041] refer to figure 1 and figure 2 , a GaN-based laser diode structure with a hole passivation layer according to an embodiment of the present invention includes an N electrode 101, an n-type GaN substrate 102, an N cladding layer 103, an N waveguide layer 104, a light-emitting active layer 105, and a P waveguide layer 106. , P-type electron ...

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Abstract

The invention provides a GaN-based laser diode structure with a hole passivation layer and a manufacturing method. The GaN-based laser diode structure with the hole passivation layer comprises an N electrode, an n-type GaN substrate, an N waveguide layer, a light-emitting active layer, a P waveguide layer, a P-type electron blocking layer and the passivation layer which are sequentially arranged in a stacked mode. A ridge strip is arranged on the surface of the upper part of the P-type electron blocking layer in a protruding manner and comprises a P covering layer, a P contact layer and a P contact electrode layer; the passivation layer comprises a first passivation layer and a second passivation layer, the first passivation layer is arranged on the upper surface of the P-type electron blocking layer and located on the two sides of the ridge strip, a chamfer is arranged on the side, close to the ridge strip, of the first passivation layer, a chamfer space is formed between the first passivation layer and the ridge strip, and the chamfers on the two sides of the ridge strip are symmetrically arranged; a gap is arranged between the upper end portion of the chamfer and the ridge strip, the second passivation layer is arranged on the upper surface of the first passivation layer, and P electrodes are further arranged on the upper surface of the second passivation layer and the ridge strip. A high light limiting effect can be formed, and the requirement for the refractive index of an insulating material is lowered.

Description

technical field [0001] The invention relates to the technical field of laser diodes, in particular to a GaN-based laser diode structure and a manufacturing method with a hole passivation layer. Background technique [0002] For edge-emitting laser diodes, in order to form a good ridge waveguide structure, an optical insulating layer is covered on the side of the ridge, which can form an optical confinement and allow current to be injected from the ridge to form a high current density and reach the laser threshold; the current method is usually Refraction SiO with a rate of around 1.46 2 and other insulating materials can form a better light confinement effect. But this is true for SiO 2 Such insulating materials have high refractive index requirements, which is not conducive to manufacturing. SUMMARY OF THE INVENTION [0003] Based on this, the purpose of the present invention is to provide a GaN-based laser diode structure with a hole passivation layer, which has a hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/20H01S5/32H01S5/323H01S5/028
CPCH01S5/2031H01S5/0282H01S5/3211H01S5/32341
Inventor 李宇翔
Owner 安徽格恩半导体有限公司
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