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Method for producing a composition, related composition and related device

A composition and self-assembly technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve problems such as high-frequency dielectric properties that have not been studied in detail

Pending Publication Date: 2022-06-03
NXP USA INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Since SBN is mainly suitable for optical applications, high-frequency dielectric properties are generally not studied in detail (the dielectric constant of SBN in thin films is reported to be about 1000 to 1800, and the tunability is about 3:1)

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  • Method for producing a composition, related composition and related device
  • Method for producing a composition, related composition and related device
  • Method for producing a composition, related composition and related device

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Embodiment Construction

[0052] The present disclosure relates to methods, related compositions, and related apparatuses for producing compositions having tunable secondary crystalline phases of relaxed dielectrics. In one embodiment, the present disclosure relates to a method of producing a tunable polycrystalline perovskite dielectric having a self-assembled tunable secondary crystal phase of a relaxed dielectric. In another embodiment, the present disclosure relates to a tunable polycrystalline perovskite dielectric with a self-assembled tunable secondary crystal phase of a relaxed dielectric. In another embodiment, the present disclosure relates to a tunable polycrystalline perovskite composition having a self-assembled tunable secondary crystal phase of a relaxor dielectric. This disclosure describes other embodiments.

[0053] As described herein, the dielectric constant of BST in polycrystalline bulk ceramics is approximately 3000 to 5000. The dielectric constants of BST films with different ...

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Abstract

Methods incorporating teachings of the present disclosure may include, for example, selecting a barium strontium titanate (BST) material, where the BST material has a perovskite lattice structure having at least a first lattice constant and a second lattice constant; selecting a strontium barium niobate (SBN) material wherein the SBN material has a lattice structure having at least a third lattice constant and a fourth lattice constant wherein the third lattice constant is substantially equal to the first lattice constant and wherein the fourth lattice constant is substantially equal to the second lattice constant; and growing the SBN material on a grain boundary region of the BST material, where the growing is performed by self-assembly, and wherein the growth is facilitated as the third lattice constant of the SBN material is substantially equal to the first lattice constant and the fourth lattice constant of the SBN material is substantially equal to the second lattice constant. Other embodiments are disclosed.

Description

technical field [0001] The present disclosure relates to methods, related compositions, and related apparatuses for producing compositions of ferroelectric perovskite primary phases and tunable secondary crystalline phases with relaxor dielectrics. Background technique [0002] In 1960, strontium barium niobate (SBN) crystals (Sr x Ba 1-x NB 2 O 6 ) (see Francombe, M.H., Acta Cristallographica, Vol. 13, (1960), p. 131). [0003] In 1970, Bell Labs published a continuous study of the optical, electrical and structural properties of SBN crystals. The high values ​​of the electro-optical and thermoelectric coefficients oriented are further mainly used for holographic and thermoelectric applications. [0004] Single crystal SBN exhibits one of the largest known linear electro-optic coefficients (nearly the primary electro-optic LiNbO 3 two orders of magnitude larger). SBN thin films have attracted much attention due to their potential use as low-voltage electro-optical w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/32C30B29/30C30B28/02
CPCC30B29/32C30B29/30C30B28/02H10N30/8536C04B35/4682C04B2235/3236C04B2235/3255C04B2235/768C04B2235/85C04B2235/96C30B29/68
Inventor 玛丽娜·泽尔纳安德鲁·弗拉基米尔·克劳德·塞尔温
Owner NXP USA INC
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