Manufacturing method of semiconductor device
A manufacturing method and semiconductor technology, which are applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of poor stability of the hole engraving process, difficult to control the depth of the first hole structure and sidewall morphology, etc., and improve the process. The effect of stability, good appearance and lower production cost
Active Publication Date: 2022-06-03
湖北江城芯片中试服务有限公司
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Problems solved by technology
[0003] The hole etching process currently only etches a hole structure with one depth on the wafer surface. If it involves etching a hole structure with two depths or more than two depths, for example, when etching to form the second hole structure, the formed The depth and sidewall morphology of the first hole structure (different from the second hole structure) is difficult to control, resulting in poor stability of the hole carving process
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[0017] The technical solutions of the present disclosure will be further elaborated below with reference to the accompanying drawings and embodiments. While exemplary implementations of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure will be more thoroughly understood, and will fully convey the scope of the present disclosure to those skilled in the art.
[0018] The present disclosure is described in more detail by way of example in the following paragraphs with reference to the accompanying drawings. The advantages and features of the present disclosure will become apparent from the following description and claims. It should be noted that the accompanying drawings are all in a very simplified form and in inaccurate scales, and are only used to facilitate an...
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The embodiment of the invention discloses a manufacturing method of a semiconductor device. The manufacturing method comprises the following steps: forming a first blind hole in a first wafer; forming a first filling structure in the first blind hole; forming a first mask structure covering the first wafer and the first filling structure; wherein the first mask structure comprises a mask opening; etching the first wafer according to the mask opening so as to form a second blind hole in the first wafer; wherein the depth of the second blind hole is different from that of the first blind hole; the position of the second blind hole is different from that of the first blind hole; and after the second blind hole is formed, removing the first mask structure and the first filling structure.
Description
technical field [0001] The embodiments of the present disclosure relate to, but are not limited to, the field of semiconductor manufacturing, and in particular, relate to a method for fabricating a semiconductor device. Background technique [0002] During the fabrication of semiconductor devices, hole structures (including through holes and / or blind holes) may be formed in the wafer through a hole engraving process. [0003] The hole etching process currently only etches a hole structure with one depth on the wafer surface. If it involves etching hole structures with two or more depths, for example, when etching to form a second hole structure, the already formed hole structure is etched. The depth and sidewall profile of the first hole structure (with a depth different from that of the second hole structure) are difficult to control, resulting in poor stability of the hole engraving process. SUMMARY OF THE INVENTION [0004] Embodiments of the present disclosure provide...
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Login to View More IPC IPC(8): H01L21/308H01L21/768
CPCH01L21/3086H01L21/76898
Inventor 汪松王逸群程曲刘天建
Owner 湖北江城芯片中试服务有限公司