Vertical transistor

Abstract

A vertical transistor includes a top source / drain region, a bottom source / drain region, a channel region vertically between the top and bottom source / drain regions, and a gate operably laterally adjacent to the channel region. The top source / drain region has a top interface with the channel region, and the bottom source / drain region has a bottom interface with the channel region. The channel region is crystalline and its grains have an average grain size of less than 20 nanometers. The channel region at the top interface or the bottom interface has a horizontal texture greater than a volume of the grains in the channel region vertically between the grains at the top and bottom interfaces. Other embodiments and aspects are disclosed.

Description

technical field [0001] Embodiments disclosed herein relate to vertical transistors. Background technique [0002] Memory is a type of integrated circuit system and is used in computer systems to store data. Memory can be fabricated as one or more arrays of individual memory cells. Memory cells may be written or read using digit lines (which may also be referred to as bit lines, data lines, or sense lines) and access lines (which may also be referred to as word lines). Sense lines can conductively interconnect memory cells along columns of the array, and access lines can conductively interconnect memory cells along rows of the array. Each memory cell is uniquely addressable by a combination of sense and access lines. [0003] Memory cells may be volatile, semi-volatile or non-volatile. Non-volatile memory cells can store data for extended periods of time in the absence of power. Non-volatile memory is conventionally designated as memory with a retention time of at least ...

AI Technical Summary

Problems solved by technology

Volatile memory dissipates and thus gets refreshed / rewritten to maintain data storage

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