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Method and device for forming film on surface of substrate and formed film

A substrate surface and equipment technology, applied in metal material coating process, coating, gaseous chemical plating, etc., can solve problems such as uneven thickness distribution

Pending Publication Date: 2022-06-24
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this reason, the present application proposes a method and equipment for forming a film on the surface of a substrate, and the formed film solves the problem of uneven thickness distribution between the center and edge of the film on the substrate

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  • Method and device for forming film on surface of substrate and formed film
  • Method and device for forming film on surface of substrate and formed film
  • Method and device for forming film on surface of substrate and formed film

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Embodiment Construction

[0015] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0016] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not to scale, some details have been exaggerated for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships are only exemplary, and may vary in practice due to manufacturing tolerances or technical limitations, and those skilled in the art will Regions / layers with differen...

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Abstract

The invention relates to the technical field of semiconductors, in particular to a method for forming a film on the surface of a substrate, which comprises the following steps of: gasifying a precursor into precursor steam; in the process of conveying the precursor steam into the deposition chamber, the gas supply flow of the precursor steam is increased through first compression and then expansion, so that a film with uniform thickness is formed on the surface of a substrate of the deposition chamber. The gas supply flow of the precursor steam is improved, so that the precursor steam can be conveyed to the center of the substrate and the top area of the deposition chamber, insufficient supply of the precursor steam at the center of the substrate is avoided, and a film with uniform thickness is formed on the surface of the substrate of the deposition chamber.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular, to a method, an apparatus, and a formed film for forming a film on a surface of a substrate. Background technique [0002] In the atomic layer deposition (ALD) process with a conventional furnace structure, when feeding into the deposition chamber, the three-way valve at the rear end of the evaporation equipment that communicates with it is always in an open state. The high viscosity of the precursor, which does not introduce enough material into the center of the substrate, results in an uneven thickness distribution between the center and the edge of the film on the substrate, which in turn affects the electrical properties of the film (such as a dielectric film), resulting in leakage current The problem. SUMMARY OF THE INVENTION [0003] The present application solves the above-mentioned technical problems in the related art at least to a certain extent. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/52
CPCC23C16/45525C23C16/52C23C16/45544
Inventor 安重镒金成基项金娟李亭亭刘青
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI