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Redistribution structure and forming method thereof

A technology of rewiring structure and rewiring layer, which is applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problem of uneven coating thickness and achieve the effect of solving uneven thickness distribution

Pending Publication Date: 2022-05-13
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention provides a rewiring layer and its forming method, which can improve the problem of uneven thickness of the large-area coating

Method used

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  • Redistribution structure and forming method thereof
  • Redistribution structure and forming method thereof
  • Redistribution structure and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1 to experiment example 4

[0069] Provide 3.5 generation (G3.5) panel samples. The size of the sample is 600 mm x 720 mm. Mesh compensation circuit layers and redistribution layers with different thicknesses and different width ratios have been formed on the surface of the sample, and a dielectric layer has been formed on the compensation circuit layer and the redistribution layer. In addition, through holes exposing the compensation circuit layer and the redistribution layer have been formed in the dielectric layer. A titanium / copper seed layer has been formed in the through hole and on the dielectric layer, and the sheet resistance of the seed layer is 1Ω / □. A copper plating process is then performed. The copper plating process is based on a conductivity of 35S / m, a Tafel slope of 1.5, and an exchange current density i 0 0.3 amps / square meter (A / m 2 ) of the electroplating solution to react, and set the anode current output to 70 amperes (that is, the full version of the electroplating sample 1.6A...

experiment example 5 to experiment example 9

[0077] A sample of generation 2.5 (G2.5) is provided. The size of the sample is 370 mm x 470 mm. Mesh compensation circuit layers and redistribution layers with different thicknesses but the same width ratio have been formed on the surface of the sample, and a dielectric layer has been formed on the compensation circuit layer and the redistribution layer. In addition, through holes exposing the compensation circuit layer and the redistribution layer have been formed in the dielectric layer. A titanium / copper seed layer has been formed in the through hole and on the dielectric layer, and the sheet resistance of the seed layer is 0.2Ω / □. A copper plating process is then performed. The copper plating process is based on a conductivity of 35S / m, a Tafel slope of 1.5, and an exchange current density i 0 0.3A / m 2 The electroplating solution is reacted, and the anode current output is set to 25 amperes, and the overvoltage is 0.45 volts to react. The results are shown in Table 2...

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Abstract

The invention discloses a re-wiring structure and a forming method thereof, and the method comprises the steps: forming a first re-wiring layer and a first compensation circuit layer which are electrically insulated from each other on a substrate, and enabling the first compensation circuit layer to surround the first re-wiring layer; forming a first dielectric layer on the first rewiring layer and the first compensation circuit layer; and a second rewiring layer and a second compensation circuit layer which are electrically insulated from each other are formed on the first dielectric layer, the second compensation circuit layer surrounds the periphery of the second rewiring layer, the second compensation circuit layer is connected with the first compensation circuit layer, and the second rewiring layer is connected with the first rewiring layer.

Description

technical field [0001] The present invention relates to a package and its forming method, in particular to a rewiring structure and its forming method. Background technique [0002] The redistribution layer (Redistribution Layer, RDL) is a key part of the package. The conductor layer of the redistribution layer is usually formed by electroplating. However, when the size of the wafer or the substrate increases, the thickness of the conductive layer in the central area and the edge area often has a problem of non-uniformity. Contents of the invention [0003] The invention provides a rewiring layer and a forming method thereof, which can improve the problem of large-area plating layer thickness unevenness. [0004] According to an embodiment of the present invention, a method for forming a rewiring structure is provided, including: forming a first rewiring layer and a first compensation circuit layer electrically insulated from each other on a substrate, and the first comp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/538
CPCH01L21/76895H01L23/5386H01L21/4857H01L23/49822H01L21/6835H01L2221/68345H01L2221/68359H01L21/561H01L23/3121H01L2224/16225H01L2224/73204H01L2924/181H01L2224/32225H01L2924/00012H01L2924/00H01L23/49838H01L24/16H01L2924/18161H01L2224/16227H01L23/3135
Inventor 郭书玮杨镇在郑惟元朱建勋郑少斐
Owner IND TECH RES INST