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Silicon reaction device

A reaction device and silicon wafer technology, which is applied in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of different center distances, silicon wafers are not distributed in concentric circles, and gas uniformity is poor. Consistent air volume and speed, avoiding the rise of particulate matter, and preventing sudden pressure changes

Pending Publication Date: 2022-06-24
盛吉盛半导体科技(北京)有限公司 +1
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Problems solved by technology

[0002] For the silicon reaction device under the prior art, its chamber is usually rectangular, and the air intake structure is arranged on the inner wall of the top of the chamber, and the air intake structure is also generally rectangular, and due to process requirements, silicon wafers are manufactured into circular shapes. This will lead to different distances between the gas inlet holes on each gas inlet structure and the center of the silicon wafer, resulting in poor gas uniformity in the silicon reaction device, and the nitrogen doping concentration of the silicon wafer is not distributed concentrically.

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Embodiment Construction

[0022] In order to further illustrate the technical means of the present invention, the specific embodiments of the silicon reaction device according to the present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments.

[0023] like figure 1 As shown, the silicon reaction device of the present invention includes a cavity 1, a silicon wafer 2 and a plurality of air inlets 3. The cavity 1 is configured as a rectangle, but it can be understood that the shape of the cavity 1 is not affected by the present invention. Without being specifically limited, in one or more other embodiments, the shape of the cavity 1 may also be a prismatic shape or a cylindrical shape. In order to ensure process requirements, the silicon wafer 2 is configured in a circular shape, and the silicon wafer 2 is arranged in the center of the interior of the cavity 1 and placed on the stage 6 . As shown in the figure, in order to achieve the uniform...

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Abstract

The invention relates to a silicon reaction device which comprises a cavity, a silicon wafer and a plurality of gas inlet parts, the silicon wafer is arranged in the cavity, the gas inlet parts are all arranged at the top of the cavity, the inner wall of each gas inlet part is constructed to be an arc surface, the inner wall of each gas inlet part and the silicon wafer have the same circle center, and a plurality of gas inlet holes are formed in the inner wall of each gas inlet part. According to the invention, the uniform distribution of gas in the silicon reaction device can be improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a silicon reaction device. Background technique [0002] For the silicon reaction device in the prior art, the chamber is usually rectangular, the gas inlet structure is arranged on the inner wall of the top of the chamber, and the gas inlet structure is also usually rectangular, and due to process requirements, the silicon wafer is manufactured into a circular shape This will cause the gas inlet holes on each gas inlet structure to have different distances from the center of the silicon wafer, resulting in poor gas uniformity in the silicon reaction device, and the result of the nitrogen doping concentration of the silicon wafer is not concentric. . In order to solve the existing problems, it is necessary to provide a silicon reaction device that improves the uniformity of gas distribution, so as to improve the uniformity of gas distribution in the s...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01L21/67017
Inventor 项习飞田才忠李士昌王美玲
Owner 盛吉盛半导体科技(北京)有限公司
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